Browsing by Subject "Theoretical investigations"

Now showing 1 - 5 of 5

Open Access
Absorption enhancement of molecules in the weak plasmon-exciton coupling regime
(Optical Society of American (OSA), 2014) Balci, S.; Karademir, E.; Kocabas, C.; Aydınlı, Atilla
We report on the experimental and theoretical investigations of enhancing the optical absorption of organic molecules in the weak plasmon-exciton coupling regime. A metal-organic hybrid structure consisting of dye molecules embedded in the polymer matrix is placed in close vicinity to thin metal films. We have observed a transition from a weak coupling regime to a strong coupling one as the thickness of the metal layer increases. The results indicate that absorption of the self-assembled J-aggregate nanostructures can be increased in the weak plasmon-exciton coupling regime and strongly quenched in the strong coupling regime. A theoretical model based on the transfer-matrix method qualitatively confirms the experimental results obtained from polarization-dependent spectroscopic reflection measurements.
Open Access
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
(Elsevier, 2013) Yu, H. -Y.; Battal, E.; Okyay, Ali Kemal; Shim, J.; Park J. -H.; Baek, J. W.; Saraswat, K. C.
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
Open Access
Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation
(IOP, 2008) Wainstein, D.; Kovalev, A.; Tetelbaum, D.; Mikhailov, A.; Bulutay, Ceyhun; Aydınlı, Atilla
The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si nanocrystals in sapphire matrix were formed by Si+ ion implantation with doses from 5×1016 to 3×1017 cm -2 at an accelerating voltage 100 kV and post-implantation annealing at 500-1100 d̀C for 2 hours. Depth distribution of lattice defects, impurities and Si nanocrystals, the peculiarities of interband electronic transitions were investigated by XPS and HREELS. The molecular orbitals and local electronic structure of the Al2O3 matrix with Si nanocrystals was calculated using an atomistic pseudopotential technique. The electronic structure of Si nanocrystals as determined from HREELS measurements is in good agreement with the theoretically calculated electronic structure for Si nanocrystals.
Open Access
Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
(2013) Kaya, U.; Hostut, M.; Kilic, A.; Sakiroglu, S.; Sokmen I.; Ergun, Y.; Aydınlı, Atilla
In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics.
Open Access
Trends in molecular design strategies for ambient stable n-channel organic field effect transistors
(Royal Society of Chemistry, 2017) Dhar, J.; Salzner, U.; Patil, S.
In recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new π-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors. However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in π-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations.