Browsing by Subject "Temperature dependence"

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Open Access
Anharmonic line shift and linewidth of the Raman modes in TlInS2 layered crystals
(John Wiley & Sons Ltd., 2004) Yuksek, N. S.; Gasanly, N. M.; Aydınlı, Atilla
The temperature dependence of the unpolarized Raman spectra from TlInS 2 layered crystal was measured between 10 and 300 K. The analysis of the experimental data showed that the temperature dependences of wavenumbers and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. This work demonstrates that the two Raman modes at 280.9 and 292.3 cm-1 exhibit changes toward high wavenumbers as the temperature is raised from 10 to 300 K.
Open Access
Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction
(Elsevier Ltd, 2020-09-11) Arslan, Engin; Badali, Yosef; Aalizadeh, Majid; Altındal, Semsettin; Ozbay, Ekmel
In this study, HfAlO3 ternary alloy thin film was grown on n-type silicon using the atomic layer deposition method. The current transport mechanisms in the (Au/Ni)/HfAlO3/n-Si junction were examined over a wide temperature range (80–360 K). The values obtained for the ideality factor (n) varied from 22.93 to 3.94 and the barrier height at zero bias (ФB0) ranged from 0.221 eV to 0.821 eV as the temperature changed from 80 to 360 K. The ΦB0–n and ΦB0–q/2 kT characteristics were investigated to explain the higher n values and non-ideal behavior of the Richardson curves. Two linear regions were found at low temperatures (LTs; 80–180 K) and high temperatures (HTs; 200–360 K), which indicated the presence of a Gaussian distribution barrier height and the average barrier heights (Φ‾B0) were identified. The values obtained for Φ‾Bo were 0.734 eV for LTs and 1.125 eV for HTs, and the values of σs were 0.085 V for LTs and 0.140 V for HTs. The values obtained for Nss decreased as the temperature increased and they varied between ~1012 and 1013 eV−1 cm−2. Finally, the dielectric behavior and conductivity of the (Au/Ni)/HfAlO3/n-Si junction were investigated at frequencies between 5 kHz and 2 MHz at room temperature. The values determined for ε′ and ε′′ at −1 V and 5 kHz were 2.1 and 3.53, respectively. © 2020
Open Access
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013) Arslan, E.; Turan, S.; Gökden, S.; Teke, A.; Özbay, Ekmel
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.
Open Access
Density profile of a Bose-Einstein condensate inside a pancake-shaped trap: Observational consequences of the dimensional cross-over in the scattering properties
(Elsevier Science B.V., 2002) Tanatar, Bilal; Minguzzi, A.; Vignolo, P.; Tosi, M. P.
It is theoretically well known that two-dimensionality of the scattering events in a Bose-Einstein condensate introduces a logarithmic dependence on density in the coupling constant entering a mean-field theory of the equilibrium density profile, which becomes dominant as the s-wave scattering length gets larger than the condensate thickness. We trace the regions of experimentally accessible system parameters for which the cross-over between different dimensionality behaviors in the scattering properties may become observable through in situ imaging of the condensed cloud with varying trap anisotropy and scattering length.
Open Access
Determination of trace element levels in human scalp hair in occupationally exposed subjects by XRF
(Akademiai Kiado Rt., 2001) Dede, Y.; Erten, H. N.; Zararsiz, A.; Efe, N.
Trace element levels in hair of individuals living in urban areas were determined by energy dispersive XRF. Two groups of subjects were investigated, the first group was assumed to be from a healthy environment, the other one was exposed to a high level of contamination due to working conditions. The results were compared to data reported in the literature. The concentrations of Ca, Fe, Cu, Zn and Pb in the scalp hair were determined and the correlation between hair trace element levels and environmental effects was discussed. The results given by the second group show that environmental exposure effects hair trace element levels which are related to body trace element concentrations.
Open Access
Drag effect in double-layer dipolar fermi gases
(IOP, 2014) Tanatar, Bilal; Renklioğlu, Başak; Öktel, M. Özgür
We consider two parallel layers of two-dimensional spin-polarized dipolar Fermi gas without any tunneling between the layers. The effective interactions describing screening and correlation effects between the dipoles in a single layer (intra-layer) and across the layers (interlayer) are modeled within the Hubbard approximation. We calculate the rate of momentum transfer between the layers when the gas in one layer has a steady flow. The momentum transfer induces a steady flow in the second layer which is assumed initially at rest. This is the drag effect familiar from double-layer semiconductor and graphene structures. Our calculations show that the momentum relaxation time has temperature dependence similar to that in layers with charged particles which we think is related to the contributions from the collective modes of the system.
Open Access
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25) Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel
Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.
Open Access
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.
The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.
Open Access
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
(Academic Press, 2016) Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla
Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.
Open Access
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27) Arslan, E.; Çakmak, H.; Özbay, Ekmel
The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Φb0 show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation ( JTU(0)) and tunneling parameters (E 0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K.
Open Access
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010) Arslan, E.; Şafak, Y.; Taşçioğlu, I.; Uslu, H.; Özbay, Ekmel
The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved.
Open Access
Graphene nanoplatelet integrated thermally drawn PVDF triboelectric nanocomposite fibers for extreme environmental conditions
(Wiley-VCH Verlag GmbH & Co. KGaA, 2024-01-03) Sadeque, Md Sazid Bin; Rahman, Mahmudur; Hasan, Md Mehdi; Ordu, Mustafa
Triboelectric nanogenerators (TENGs) utilize the synergetic eﬀect of triboelectriﬁcation and electrostatic induction to guide electrons through an external circuit, enabling low-frequency mechanical and biomechanical energy harvesting and self-powered sensing. Integrating 2D material with a high speciﬁc surface area into ﬂexible ferroelectric polymers such as polyvinylidene diﬂuoride (PVDF) has proven to be an eﬃcient strategy to improve the performance of TENG devices. Scalable fabrication of graphene-integrated PVDF nanocomposite ﬁber using thermal drawing process is demonstrated for the ﬁrst time in this study. The open-circuit voltage and short-circuit current show 1.41 times and 1.48 times improvement with the integration of 5% graphene in the PVDF ﬁbers, respectively. The TENG fabric shows a maximum power output of 32.14 μW at a matching load of 7 M𝛀 and a power density of 53.57 mW m$^{−2}$. The ﬁbers exhibit excellent stability in harsh environmental conditions such as alkaline medium, high/low temperature, multi-washing cycle, and long-time usage.
Open Access
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
(IEEE, 2007) Sarı, Emre; Nizamoğlu, Sedat; Özel, Tuncay; Demir, Hilmi Volkan; İnal, Ayşe; Ülker, Erkin; Özbay, Ekmel; Dikme, Y.; Heuken, M.
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.
Open Access
The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures
(Elsevier BV, 2008-11) Tekeli, Z.; Altındal, Ş.; Çakmak, M.; Özçelik, S.; Özbay, Ekmel
The temperature dependence of capacitance–voltage (C–V) and the conductance–voltage (G/w–V) characteristics of (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance (Rs) and interface states Nss in a wide temperature range (79–395 K). Our experimental results show that both Rs and Nss were found to be strongly functional with temperature and bias voltage. Therefore, they affect the (C–V) and (G/w–V) characteristics. The values of capacitance give two peaks at high temperatures, and a crossing at a certain bias voltage point (∼3.5 V). The first capacitance peaks are located in the forward bias region (∼0.1 V) at a low temperature. However, from 295 K the second capacitance peaks appear and then shift towards the reverse bias region that is located at ∼−4.5 V with increasing temperature. Such behavior, as demonstrated by these anomalous peaks, can be attributed to the thermal restructuring and reordering of the interface states. The capacitance (Cm) and conductance (G/w–V) values that were measured under both reverse and forward bias were corrected for the effect of series resistance in order to obtain the real diode capacitance and conductance. The density of Nss, depending on the temperature, was determined from the (C–V) and (G/w–V) data using the Hill–Coleman Method.
Open Access
Quantum effects of thermal conductance through atomic chains
(2001) Ozpineci, A.; Çıracı, Salim
We present a formalism for an atomic scale study of phononic heat transfer. The expression of thermal energy current can be cast in the Landauer form and incorporates the transmission coefficient explicitly. Calculation of the thermal conductance of a monoatomic chain of N atoms between two reservoirs shows interesting quantum features. The conductance density appears as Lorentzian type resonances at the eigenfrequencies of the chain. At low-temperature limit the discrete vibrational frequency spectrum of a "soft" chain may reflect on the thermal conductance by giving rise to a sudden increase. At room temperature, the conductance through a "stiff" chain may oscillate with the number of chain atoms. The obtained quantum features are compared with similar effects found in the quantized electrical conductance.
Open Access
Reduced density matrix approach to phononic dissipation in friction
(2000) Özpineci, A.; Leitner, D. M.; Çıracı, Salim
Understanding mechanisms for energy dissipation from nanoparticles in contact with large samples is a central problem in describing friction microscopically. Calculation of the reduced density matrix appears to be the most suitable method to study such systems that are coupled to a large environment. In this paper, the time evolution of the reduced density matrix has been evaluated for an arbitrary system coupled to a heat reservoir. The formalism is then applied to study the vibrational relaxation following the stick-slip motion of an asperity on a surface. The frequency and temperature dependence of the relaxation time is also determined. Predictions of the reduced density matrix are compared with those obtained by using the Golden Rule approach.
Open Access
The substrate temperature dependent electrical properties of titanium dioxide thin films
(2010) Yildiz, A.; Lisesivdin, S.B.; Kasap, M.; Mardare, D.
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical resistivity measurements showed that three types of conduction channels contribute to conduction mechanism in the temperature range of 13-320 K. The temperature dependence of electrical resistivity between 150 and 320 K indicated that electrical conductioninthe films was controlled by potential barriers caused by depletion of carriers at grain boundaries. The conduction mechanism of the films was shifted from grain boundary scattering dominated band conduction to the nearest neighbor hopping conduction at temperatures between 55 and 150 K. Below 55 K, the temperature dependence of electrical resistivity shows variable range hopping conduction. The correlation between the substrate temperature and resistivity behaviorisdiscussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different conduction models. With these analyses, various electrical parameters of the present samples such as barrier height, donor concentration, density of states at the Fermi level, acceptor concentration and compensation ratio were determined. Their values as a function of substrate temperature were compared. © Springer Science+Business Media, LLC 2009.
Open Access
Temperature dependence of the energy of a vortex in a two-dimensional Bose gas
(Elsevier, 2004) Rajagopal, K. K.; Tanatar, Bilal; Vignolo, P.; Tosi, M. P.
We evaluate the thermodynamic critical angular velocity Ωc(T) for creation of a vortex of lowest quantized angular momentum in a strictly two-dimensional Bose gas at temperature T, using a mean-field two-fluid model for the condensate and the thermal cloud. Our results show that (i) a Thomas-Fermi description of the condensate badly fails in predicting the particle density profiles and the energy of the vortex as functions of T; and (ii) an extrapolation of a simple Thomas-Fermi formula for Ωc(0) is nevertheless approximately useful up to T≃0.5Tc.
Open Access
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
(2012) Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel
The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e) of hot electrons was obtained from the lattice temperature (T L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25Ga 0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. © 2012 Elsevier Ltd. All rights reserved.
Open Access
Thermodynamic parameters of Cs+ sorption on natural clays
(Akademiai Kiado Rt., 2002) Shahwan, T.; Erten, H. N.
The sorption behavior of Cs+ on kaolinite, chlorite-illite, and bentonite clays as a function of time, cation concentration, and temperature was studied using the radiotracer method. Sorption data were well represented by Freundlich and Dubinin-Radushkevich type isotherms. Bentonite was found to have the highest sorption capacity and the highest exchange affinity to Cs+. In all three cases Cs+ sorption was found to be exothermic with ΔH° (kJ/mol) -13, -8, -19 and ΔS° (J/mol·K) -15, 31, and -3 for kaolinite, chlorite-illite, and bentonite, respectively. Negative ΔG° values were obtained in all cases, indicating the spontaneity of sorption. The magnitudes of ΔG° suggest that ion exchange is the primary sorption mechanism.