Browsing by Subject "Photoluminescence spectrum"

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    The effect of gadolinium doping on the structural, magnetic and photoluminescence properties of electrospun bismuth ferrite nanofibers
    (Elsevier Ltd, 2015) George Philip G.; Senthamizhan, A.; Srinivasan Natarajan, T.; Chandrasekaran G.; Annal Therese H.
    Gadolinium (Gd) doped Bismuth ferrite (BFO) nanofibers (Bi1-xGdxFeO3 (x=0.0, 0.05, 0.10, 0.15 and 0.20)) were synthesized via electrospinning. Scanning Electron Microscope (SEM) analysis showed that the diameter of the nanofibers ranged from 150 to 250 nm. X-Ray Diffraction (XRD) analysis revealed a structural phase transition with varying 'x', the compositions with x≤0.10 have crystal structures with space group R3c, while the compositions with x > 0.10 have crystal structures with space group Pnma. Vibrating Sample Magnetometer (VSM) analysis exhibited the weak ferromagnetic nature of the BFO nanofibers. However an increase in the saturated magnetic moment with increase in Gd dopant concentration was observed. The Photoluminescence (PL) spectra of the Bi:1-x :x nanofibers show enhanced Near Band Emission (NBE) intensity at x=0.10 due to the passivation of oxygen vacancies by Gd doping. © 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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    Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films
    (Materials Research Society, 2017) Chubenko, E.; Bondarenko, V.; Ghobadi, Amir; Ulusoy, Gamze; Topallı, Kağan; Okyay, Ali Kemal
    In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.
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    Temperature-dependent optoelectronic properties of quasi-2D colloidal cadmium selenide nanoplatelets
    (Royal Society of Chemistry, 2017) Bose, S.; Shendre, S.; Song, Z.; Sharma, V. K.; Zhang, D. H.; Dang C.; Fan, W.; Demir, Hilmi Volkan
    Colloidal cadmium selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterials suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and luminescence properties. It is important to understand how and why the characteristics of NPLs are influenced, particularly at elevated temperatures, where both reversible and irreversible quenching processes come into the picture. Here we present a study of the effect of elevated temperatures on the characteristics of colloidal CdSe NPLs. We used an effective-mass envelope function theory based 8-band k·p model and density-matrix theory considering exciton-phonon interaction. We observed the photoluminescence (PL) spectra at various temperatures for their photon emission energy, PL linewidth and intensity by considering the exciton-phonon interaction with both acoustic and optical phonons using Bose-Einstein statistical factors. With a rise in temperature we observed a fall in the transition energy (emission redshift), matrix element, Fermi factor and quasi Fermi separation, with a reduction in intraband state gaps and increased interband coupling. Also, there was a fall in the PL intensity, along with spectral broadening due to an intraband scattering effect. The predicted transition energy values and simulated PL spectra at varying temperatures exhibit appreciable consistency with the experimental results. Our findings have important implications for the application of NPLs in optoelectronic devices, such as NPL lasers and LEDs, operating much above room temperature.
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    Time resolved photoluminescence study of magnetic CdSe/CdMnS/CdS core/multi-shell nanoplatelets
    (SPIE, 2017) Murphy, J. R.; Delikanlı, Savaş; Zhang, T.; Scrace, T. A.; Zhang, P.; Norden, T.; Thomay, T.; Cartwright, A. N.; Demir, Himli Volkan; Petrou, A.
    Colloidal semiconductor nanoplatelets (NPLs) are quasi 2D-nanostructures that are grown and processed inexpensively using a solution based method and thus have recently attracted considerable attention. We observe two features in the photoluminescence spectrum, suggesting two possible recombination channels. Their intensity ratio varies with temperature and two distinct temperature regions are identified; a low temperature region (10K < T < 90K) and a high temperature region (90K < T < 200K). This ratio increases with increasing temperature, suggesting that one recombination channel involves holes that are weakly localized with a localization energy of 0.043meV. A possible origin of these localized states are energy-variations in the xy-plane of the nanoplatelet. The presence of positive photoluminescence circular polarization in the magnetically-doped core/multi-shell NPLs indicates a hole-dopant exchange interaction and therefore the incorporated magnetic Manganese ions act as a marker that determines the location of the localized hole states.1 Time-resolved measurements show two distinct timescales (τfast and τslow) that can be modeled using a rate equation model. We identify these timescales as closely related to the corresponding recombination times for the channels. The stronger hole localization of one of these channels leads to a decreased electron-hole wave function overlap and thus a decreased oscillator strength and an increased lifetime. We show that we can model and understand the magnetic interaction of doped 2D-colloidal nanoplatelets which opens a pathway to solution processable spin controllable light sources. Copyright © 2017 SPIE.
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    UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
    (IOP Publishing, 2013) Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, Ali Kemal
    We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.