Browsing by Subject "Light Emitting Diodes"

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    Color science of nanocrystal quantum dots for lighting and displays
    (De Gruyter, 2013-02) Erdem, T.; Demir, Hilmi Volkan
    Colloidal nanocrystals of semiconductor quantum dots (QDs) are gaining prominence among the optoelectronic materials in the photonics industry. Among their many applications, their use in artificial lighting and displays has attracted special attention thanks to their high efficiency and narrow emission band, enabling spectral purity and fine tunability. By employing QDs in color-conversion LEDs, it is possible to simultaneously accomplish successful color rendition of the illuminated objects together with a good spectral overlap between the emission spectrum of the device and the sensitivity of the human eye, in addition to a warm white color, in contrast to other conventional sources such as incandescent and fluorescent lamps, and phosphor-based LEDs, which cannot achieve all of these properties at the same time. In this review, we summarize the color science of QDs for lighting and displays, and present the recent developments in QD-integrated LEDs and display research. First, we start with a general introduction to color science, photometry, and radiometry. After presenting an overview of QDs, we continue with the spectral designs of QD-integrated white LEDs that have led to efficient lighting for indoor and outdoor applications. Subsequently, we discuss QD color-conversion LEDs and displays as proof-of-concept applications - a new paradigm in artificial lighting and displays. Finally, we conclude with a summary of research opportunities and challenges along with a future outlook.
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    Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes
    (AIP Publishing, 2014) Ji Y.; Liu W.; Erdem, T.; Chen R.; Tan S.T.; Zhang Z.-H.; Ju, Z.; Zhang X.; Sun, H.; Sun, X. W.; Zhao Y.; DenBaars, S. P.; Nakamura, S.; Demir, Hilmi Volkan
    The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
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    Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
    (AIP Publishing, 2013) Ju, Z. G.; Liu, W.; Zhang, Z. H.; Tan, S. T.; Ji, Y.; Kyaw, Z. B.; Zhang, X. L.; Lu, S. P.; Zhang, Y. P.; Zhu, B.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan
    InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
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    On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
    (AIP Publishing, 2014) Zhang Z.-H.; Ji Y.; Liu W.; Tan S.T.; Kyaw, Z.; Ju, Z.; Zhang X.; Hasanov N.; Lu S.; Zhang, Y.; Zhu B.; Sun, X. W.; Demir, Hilmi Volkan
    In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.
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    A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores
    (Optical Society of America, 2009-12-24) Erdem, T.; Nizamoglu, S.; Sun, X. W.; Demir, Hilmi Volkan
    We report a photometric study of ultra-efficient light emitting diodes (LEDs) that exhibit superior color rendering index (CRI) and luminous efficacy of optical radiation (LER) using semiconductor quantum dot nanocrystal (NC) luminophores. Over 200 million systematically varied NC-LED designs have been simulated to understand feasible performance in terms of CRI vs. LER. We evaluated the effects of design parameters including peak emission wavelength, full-width-at-half-maximum, and relative amplitudes of each NC color component on LED performance. Warm-white LEDs with CRI >90 and LER >380 lm/W at a correlated color temperature of 3000 K are shown to be achieved using nanocrystal luminophores. (C) 2009 Optical Society of America