Browsing by Subject "Ellipsometry"

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    Actively tunable thin films for visible light by thermo-optic modulation of ZnO
    (Wiley-VCH Verlag, 2016) Battal, E.; Okyay, Ali Kemal
    Applications of active control of light matter interactions within integrated photonics, hyper-spectral imaging, reconfigurable lasers, and selective bio-surfaces have enormously increased the demand for realization of optical modulation covering the spectrum from ultraviolet (UV) up to infrared (IR) wavelength range. In this study, we demonstrate ZnO-based actively tunable perfect absorber operating within UV and visible spectrum with more than 5 nm shift in the resonant absorption wavelength. Using spectroscopic ellipsometry technique, we extract temperature-dependent optical constants of atomic layer-deposited ZnO within 0.3-1.6 and 4-40 μm spectra. We also observe bandgap narrowing of ZnO at elevated temperatures due to lattice relaxation verified by the red-shift of phonon-modes. At around its bandgap, refractive index variations up to 0.2 is obtained and ZnO is shown to exhibit thermo-optic coefficient as high as 9.17 × 10-4 K-1 around the bandgap which is the largest among well-known large bandgap materials. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
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    High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror
    (IEEE, Piscataway, NJ, United States, 2000) Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Gokkavas, M.; Unlu, S.
    Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the bandwidth-efficiency trade-off. A resonant cavity enhanced (RCE) photodetection scheme offers the possibility to overcome this limitation. Very high BWE products are achieved using Schottky and p-i-n type RCE photodiodes, which could not be reached with conventional detector structures. Even better performances should be possible for RCE Schottky photodiodes if one can get rid of the optical losses and scattering caused by the Schottky metal, Au, which also serves as the top mirror of the resonant cavity. The transparent, low resistivity material indium-tin-oxide (ITO) is a potential alternative to thin semi-transparent Au as a Schottky-barrier contact material. We report our work on high-performance ITO-based RCE Schottky photodiodes.
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    Prism coupling technique investigation of elasto-optical properties of thin polymer films
    (American Institute of Physics, 2004) Ay, F.; Kocabas, A.; Kocabas, C.; Aydınlı, Atilla; Agan, S.
    The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three different polymers; polystyrene, polymethyl-methacrylate, and benzocyclobutane. The out-of-plane elastic modulus, refractive index, film thickness, and birefringence of thin polymer films were determined by means of the prism coupling technique. The effect of the applied stress on the refractive index and birefringence of the films was investigated. Three-dimensional finite element method analysis was used so as to obtain the principal stresses for each polymer system, and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined. It was found that the applied stress in the out-of-plane direction of the thin films investigated leads to negative elasto-optic coefficients, as observed for all the three thin polymer films.
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    Structural and optical properties of an InxGa1-xN/GaN nanostructure
    (Elsevier BV * North-Holland, 2007) Korçak, S.; Öztürk, M. K.; Çörekçi, S.; Akaoğlu, B.; Yu, H.; Çakmak, M.; Sağlam, S.; Özçelik, S.; Özbay, Ekmel
    The structural and optical properties of an InxGa1-xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.
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    Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
    (Elsevier BV * North-Holland, 2017) Bayrak, T.; Ozgit-Akgun, C.; Goldenberg, E.
    Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.