Browsing by Author "Wang, L."

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Open Access
Anticoagulant activity of singlet oxygen released from a water soluble endoperoxide by thermal cycloreversion
(Royal Society of Chemistry, 2021-04-19) Liu, M.; Uçar, Esma; Liu, Z.; Wang, L.; Yang, L.; Xu, J.; Akkaya, E. U.
Singlet oxygen generated by photosensitization has limited potential in vivo due to light attenuation in tissues. However, controlled chemical generation of this reactive oxygen species is likely to open new therapeutic spaces to explore. The fact that its activity is limited by the rate of cycloreversion reaction and the diffusion distance of the excited state molecular oxygen species, is a clear advantage, considering the serious side effects of off-target anticoagulants. In this work, we present novel 1,4-naphthalene endoperoxides as potential anti-coagulant agents due to thermal release of singlet oxygen.
Open Access
The Association between familial risk and brain abnormalities Is disease specific: an ENIGMA-relatives study of schizophrenia and bipolar disorder
(Elsevier, 2019) Zwarte, S. M. C.; Brouwer, R. M.; Agartz, I.; Alda, M.; Aleman, A.; Alpert, K. I.; Bearden, C. E.; Bertolino, A.; Bois, C.; Bonvino, A.; Bramon, E.; Buimer, E.; Cahn, W.; Cannon, D. M.; Cannon, T. D.; Caseras, X.; Castro-Fornieles, J.; Chen, Q.; Serna, E.; Giorgio, A. D.; Doucet, G.; Eker, M. C.; Erk, S.; Fears, S.; Foley, S.; Frangou, S.; Frankland, A.; Fullerton, J.; Glahn, D.; Goghari, V.; Goldman, A.; Gonul, A.; Gruber, O.; Haan, L.; Hajek, T.; Hawkins, E.; Heinz, A.; Hillegers, M.; Pol, H.; Hultman, C.; Ingvar, M.; Johansson, V.; Jönsson, E.; Kane, K.; Kempton, M.; Koenis, M.; Kopecek, M.; Krabbendam, L.; Krämer, B.; Lawrie, S.; Lenroot, R.; Marcelis, M.; Marsman, J-B; Mattay, V.; McDonald, C.; Meyer-Lindenberg, A.; Michielse, S.; Mitchell, P.; Moreno, D.; Murray, R.; Mwangi, B.; Najt, P.; Neilson, E.; Newport, J.; Os, J.; Overs, B.; Özerdem, A.; Picchioni, M.; Richter, A.; Roberts, G.; Aydoğan, A. S.; Schofield, P.; Şimşek, F.; Soares, J.; Sugranyes, G.; Toulopoulou, Timothea; Tronchin, G.; Walter, H.; Wang, L.; Weinberger, D.; Whalley, H.; Yalın, N.; Andreassen, O.; Ching, C.; Erp, T.; Turner, J.; Jahanshad, N.; Thompson, P.; Kahn, R.; Haren, N.
Abstract Background Schizophrenia and bipolar disorder share genetic liability, and some structural brain abnormalities are common to both conditions. First-degree relatives of patients with schizophrenia (FDRs-SZ) show similar brain abnormalities to patients, albeit with smaller effect sizes. Imaging findings in first-degree relatives of patients with bipolar disorder (FDRs-BD) have been inconsistent in the past, but recent studies report regionally greater volumes compared with control subjects. Methods We performed a meta-analysis of global and subcortical brain measures of 6008 individuals (1228 FDRs-SZ, 852 FDRs-BD, 2246 control subjects, 1016 patients with schizophrenia, 666 patients with bipolar disorder) from 34 schizophrenia and/or bipolar disorder family cohorts with standardized methods. Analyses were repeated with a correction for intracranial volume (ICV) and for the presence of any psychopathology in the relatives and control subjects. Results FDRs-BD had significantly larger ICV (d = +0.16, q < .05 corrected), whereas FDRs-SZ showed smaller thalamic volumes than control subjects (d = −0.12, q < .05 corrected). ICV explained the enlargements in the brain measures in FDRs-BD. In FDRs-SZ, after correction for ICV, total brain, cortical gray matter, cerebral white matter, cerebellar gray and white matter, and thalamus volumes were significantly smaller; the cortex was thinner (d < −0.09, q < .05 corrected); and third ventricle was larger (d = +0.15, q < .05 corrected). The findings were not explained by psychopathology in the relatives or control subjects. Conclusions Despite shared genetic liability, FDRs-SZ and FDRs-BD show a differential pattern of structural brain abnormalities, specifically a divergent effect in ICV. This may imply that the neurodevelopmental trajectories leading to brain anomalies in schizophrenia or bipolar disorder are distinct.
Open Access
Building eco-friendly corporations: The role of minority shareholders
(Springer, 2022-12-06) Yao, S.; Pan, Y.; Wang, L.; Şensoy, Ahmet; Cheng, F.
Based on China’s mandatory requirement for listed firms to implement online voting in their annual general shareholder meetings, we investigate whether and how minority shareholders influence corporate environmental performance (CEP). We use the difference-in-difference approach and find that the implementation of online voting promotes minority shareholders’ participation in shareholder meetings, which, in turn, leads to improved CEP of listed firms. We discover that “local pollution” exposure and “the increasing awareness of listed firms’ environmental risks” are the main motives of minority shareholders concerning listed firms’ environmental performance. Furthermore, we find that the minority shareholders improve CEP of listed firms through influencing groups with greater bargaining power. © 2022, The Author(s), under exclusive licence to Springer Nature B.V.
Open Access
Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer
(Wiley-VCH Verlag, 2018) Liu, B.; Wang, L.; Gu, H.; Sun, H.; Demir, Hilmi Volkan
Adopting proper electron transport layers (ETLs) is essential to high-performance all-inorganic perovskite light-emitting diodes (PeLEDs). However, the effect of ETLs has not been comprehensively investigated in all-inorganic nanocrystal PeLEDs, while 2,2′,2′′-(1,3,5-benzenetriyl) tris-[1-phenyl-1H-benzimidazole] (TPBi) is the most common ETL. Herein, a novel strategy is proposed to enhance the efficiency of nanocrystal PeLEDs. Tris(8-hydroxyquinoline) aluminum (Alq3) is incorporated into TPBi to form a new ETL TPBi/Alq3/TPBi, simultaneously enabling charge balance and confinement. The green PeLED with new ETL exhibits a maximum external quantum efficiency (EQE) of 1.43%, current efficiency of 4.69 cd A−1, and power efficiency of 1.84 lm W−1, which are 191%, 192%, and 211% higher than those of PeLEDs with conventional ETL TPBi, respectively. Significantly, the EQE is 36-fold higher than that of PeLED with high electron mobility ETL. Impressively, the full width at half-maximum of electroluminescence emission is 16 nm, which is the narrowest among CsPbBr3 PeLEDs. The findings may present a rational strategy to enhance the device engineering of all-inorganic PeLEDs.
Open Access
A hole accelerator for InGaN/GaN light-emitting diodes
(AIP Publishing, 2014) Zhang, Z. H.; Liu, W.; Tan, S. T.; Ji, Y.; Wang, L.; Zhu, B.; Zhang, Y.; Lu, S.; Zhang, X.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan
The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. (C) 2014 AIP Publishing LLC.
Open Access
A hole modulator for InGaN/GaN light-emitting diodes
(American Institute of Physics, 2015) Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan
The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.
Open Access
InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
(AIP Publishing, 2014) Zhang Z.-H.; Liu W.; Ju, Z.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang, X.; Wang, L.; Sun, X. W.; Demir, Hilmi Volkan
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.
Open Access
Light-Emitting diodes with Cu-Doped colloidal quantum wells: from ultrapure green, tunable dual-emission to white light
(WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2019) Liu, B.; Sharma, Manoj; Yu, J.; Shendre, S.; Hettiarachchi, C.; Sharma, Ashma; Yeltik, Aydan; Wang, L.; Sun, H.; Dang, C.; Demir, Hilmi Volkan
Copper‐doped colloidal quantum wells (Cu‐CQWs) are considered a new class of optoelectronic materials. To date, the electroluminescence (EL) property of Cu‐CQWs has not been revealed. Additionally, it is desirable to achieve ultrapure green, tunable dual‐emission and white light to satisfy the various requirement of display and lighting applications. Herein, light‐emitting diodes (LEDs) based on colloidal Cu‐CQWs are demonstrated. For the 0% Cu‐doped concentration, the LED exhibits Commission Internationale de L'Eclairage 1931 coordinates of (0.103, 0.797) with a narrow EL full‐wavelength at half‐maximum of 12 nm. For the 0.5% Cu‐doped concentration, a dual‐emission LED is realized. Remarkably, the dual emission can be tuned by manipulating the device engineering. Furthermore, at a high doping concentration of 2.4%, a white LED based on CQWs is developed. With the management of doping concentrations, the color tuning (green, dual‐emission to white) is shown. The findings not only show that LEDs with CQWs can exhibit polychromatic emission but also unlock a new direction to develop LEDs by exploiting 2D impurity‐doped CQWs that can be further extended to the application of other impurities (e.g., Mn, Ag).
Open Access
Oncogenic signaling pathways in the Cancer Genome Atlas
(Cell Press, 2018) Sanchez-Vega, F.; Mina, M.; Armenia, J.; Chatila, W. K.; Luna, A.; La, K. C.; Dimitriadoy, S.; Liu, D. L.; Kantheti, H. S.; Saghafinia, S.; Chakravarty, D.; Daian, F.; Gao, Q.; Bailey, M. H.; Liang, W. -W.; Foltz, S. M.; Shmulevich, I.; Ding, L.; Heins, Z.; Ochoa, A.; Gross, B.; Gao, J.; Zhang, H.; Kundra, R.; Kandoth, C.; Bahceci, I.; Dervishi, L.; Doğrusöz, Uğur; Zhou, W.; Shen, H.; Laird, P. W.; Way, G. P.; Greene, C. S.; Liang, H.; Xiao, Y.; Wang, C.; Iavarone, A.; Berger, A. H.; Bivona, T. G.; Lazar, A. J.; Hammer, G. D.; Giordano, T.; Kwong, L. N.; McArthur, G.; Huang, C.; Tward, A. D.; Frederick, M. J.; McCormick, F.; Meyerson, M.; Caesar-Johnson, S. J.; Demchok, J. A.; Felau, I.; Kasapi, M.; Ferguson, M. L.; Hutter, C. M.; Sofia, H. J.; Tarnuzzer, R.; Wang, Z.; Yang, L.; Zenklusen, J. C.; Zhang, J. J.; Chudamani, S.; Liu, J.; Lolla, L.; Naresh, R.; Pihl, T.; Sun, Q.; Wan, Y.; Wu, Y.; Cho, J.; DeFreitas, T.; Frazer, S.; Gehlenborg, N.; Getz, G.; Heiman, D. I.; Kim, J.; Lawrence, M. S.; Lin, P.; Meier, S.; Noble, M. S.; Saksena, G.; Voet, D.; Zhang, H.; Bernard, B.; Chambwe, N.; Dhankani, V.; Knijnenburg, T.; Kramer, R.; Leinonen, K.; Liu, Y.; Miller, M.; Reynolds, S.; Shmulevich, I.; Thorsson, V.; Zhang, W.; Akbani, R.; Broom, B. M.; Hegde, A. M.; Ju, Z.; Kanchi, R. S.; Korkut, A.; Li, J.; Liang, H.; Ling, S.; Liu W.; Lu, Y.; Mills, G. B.; Ng, K. -S.; Rao, A.; Ryan, M.; Wang, J.; Weinstein, J. N.; Zhang, J.; Abeshouse, A.; Armenia, J.; Chakravarty, D.; Chatila, W. K.; de, Bruijn, I.; Gao, J.; Gross, B. E.; Heins, Z. J.; Kundra, R.; La, K.; Ladanyi, M.; Luna, A.; Nissan, M. G.; Ochoa, A.; Phillips, S. M.; Reznik, E.; Sanchez-Vega, F.; Sander, C.; Schultz, N.; Sheridan, R.; Sumer, S. O.; Sun, Y.; Taylor, B. S.; Wang, J.; Zhang, H.; Anur, P.; Peto, M.; Spellman, P.; Benz, C.; Stuart, J. M.; Wong, C. K.; Yau, C.; Hayes, D. N.; Parker, J. S.; Wilkerson, M. D.; Ally, A.; Balasundaram, M.; Bowlby, R.; Brooks, D.; Carlsen, R.; Chuah, E.; Dhalla, N.; Holt, R.; Jones, S. J. M.; Kasaian, K.; Lee, D.; Ma, Y.; Marra, M. A.; Mayo, M.; Moore, R. A.; Mungall, A. J.; Mungall, K.; Robertson, A. G.; Sadeghi, S.; Schein, J. E.; Sipahimalani, P.; Tam, A.; Thiessen, N.; Tse, K.; Wong, T.; Berger, A. C.; Beroukhim, R.; Cherniack, A. D.; Cibulskis, C.; Gabriel, S. B.; Gao, G. F.; Ha, G.; Meyerson, M.; Schumacher, S. E.; Shih, J.; Kucherlapati, M. H.; Kucherlapati, R. S.; Baylin, S.; Cope, L.; Danilova, L.; Bootwalla, M. S.; Lai, P. H.; Maglinte, D. T.; Van, Den, Berg, D. J.; Weisenberger, D. J.; Auman, J. T.; Balu, S.; Bodenheimer, T.; Fan, C.; Hoadley, K. A.; Hoyle, A. P.; Jefferys, S. R.; Jones, C. D.; Meng, S.; Mieczkowski, P. A.; Mose, L. E.; Perou, A. H.; Perou, C. M.; Roach, J.; Shi, Y.; Simons, J. V.; Skelly, T.; Soloway, M. G.; Tan, D.; Veluvolu, U.; Fan, H.; Hinoue, T.; Laird, P. W.; Shen, H.; Zhou, W.; Bellair, M.; Chang, K.; Covington, K.; Creighton, C. J.; Dinh, H.; Doddapaneni, H.; Donehower, L. A.; Drummond, J.; Gibbs, R. A.; Glenn, R.; Hale, W.; Han, Y.; Hu, J.; Korchina, V.; Lee, S.; Lewis, L.; Li, W.; Liu, X.; Morgan, M.; Morton, D.; Muzny, D.; Santibanez, J.; Sheth, M.; Shinbrot, E.; Wang, L.; Wang, M.; Wheeler, D. A.; Xi, L.; Zhao, F.; Hess, J.; Appelbaum, E. L.; Bailey, M.; Cordes, M. G.; Ding, L.; Fronick, C. C.; Fulton, L. A.; Fulton, R. S.; Kandoth, C.; Mardis, E. R.; McLellan, M. D.; Miller, C. A.; Schmidt, H. K.; Wilson, R. K.; Crain, D.; Curley, E.; Gardner, J.; Lau, K.; Mallery, D.; Morris, S.; Paulauskis, J.; Penny, R.; Shelton, C.; Shelton, T.; Sherman, M.; Thompson, E.; Yena, P.; Bowen, J.; Gastier-Foster, J. M.; Gerken, M.; Leraas, K. M.; Lichtenberg, T. M.; Ramirez, N. C.; Wise, L.; Zmuda, E.; Corcoran, N.; Costello, T.; Hovens, C.; Carvalho, A. L.; de, Carvalho, A. C.; Fregnani, J. H.; Longatto-Filho, A.; Reis, R. M.; Scapulatempo-Neto, C.; Silveira, H. C. S.; Vidal, D. O.; Burnette, A.; Eschbacher, J.; Hermes, B.; Noss, A.; Singh, R.; Anderson, M. L.; Castro, P. D.; Ittmann, M.; Huntsman, D.; Kohl, B.; Le, X.; Thorp, R.; Andry, C.; Duffy, E. R.; Lyadov, V.; Paklina, O.; Setdikova, G.; Shabunin, A.; Tavobilov, M.; McPherson, C.; Warnick, R.; Berkowitz, R.; Cramer, D.; Feltmate, C.; Horowitz, N.; Kibel, A.; Muto, M.; Raut, C. P.; Malykh, A.; Barnholtz-Sloan, J. S.; Barrett, W.; Devine, K.; Fulop, J.; Ostrom, Q. T.; Shimmel, K.; Wolinsky, Y.; Sloan, A. E.; De, Rose, A.; Giuliante, F.; Goodman, M.; Karlan, B. Y.; Hagedorn, C. H.; Eckman, J.; Harr, J.; Myers, J.; Tucker, K.; Zach, L. A.; Deyarmin, B.; Hu, H.; Kvecher, L.; Larson, C.; Mural, R. J.; Somiari, S.; Vicha, A.; Zelinka, T.; Bennett, J.; Iacocca, M.; Rabeno, B.; Swanson, P.; Latour, M.; Lacombe, L.; Têtu, B.; Bergeron, A.; McGraw, M.; Staugaitis, S. M.; Chabot, J.; Hibshoosh, H.; Sepulveda, A.; Su, T.; Wang, T.; Potapova, O.; Voronina, O.; Desjardins, L.; Mariani, O.; Roman-Roman, S.; Sastre, X.; Stern, M. -H.; Cheng, F.; Signoretti, S.; Berchuck, A.; Bigner, D.; Lipp, E.; Marks, J.; McCall, S.; McLendon, R.; Secord, A.; Sharp, A.; Behera, M.; Brat, D. J.; Chen, A.; Delman, K.; Force, S.; Khuri, F.; Magliocca, K.; Maithel, S.; Olson, J. J.; Owonikoko, T.; Pickens, A.; Ramalingam, S.; Shin, D. M.; Sica, G.; Van, Meir, E. G.; Zhang, H.; Eijckenboom, W.; Gillis, A.; Korpershoek, E.; Looijenga, L.; Oosterhuis, W.; Stoop, H.; van, Kessel, K. E.; Zwarthoff, E. C.; Calatozzolo, C.; Cuppini, L.; Cuzzubbo, S.; DiMeco, F.; Finocchiaro, G.; Mattei, L.; Perin, A.; Pollo, B.; Chen, C.; Houck, J.; Lohavanichbutr, P.; Hartmann, A.; Stoehr, C.; Stoehr, R.; Taubert, H.; Wach, S.; Wullich, B.; Kycler, W.; Murawa, D.; Wiznerowicz, M.; Chung, K.; Edenfield, W. J.; Martin, J.; Baudin, E.; Bubley, G.; Bueno, R.; De, Rienzo, A.; Richards, W. G.; Kalkanis, S.; Mikkelsen, T.; Noushmehr, H.; Scarpace, L.; Girard, N.; Aymerich, M.; Campo, E.; Giné, E.; Guillermo, A. L.; Van, Bang, N.; Hanh, P. T.; Phu, B. D.; Tang, Y.; Colman, H.; Evason, K.; Dottino, P. R.; Martignetti, J. A.; Gabra, H.; Juhl, H.; Akeredolu, T.; Stepa, S.; Hoon, D.; Ahn, K.; Kang, K. J.; Beuschlein, F.; Breggia, A.; Birrer, M.; Bell, D.; Borad, M.; Bryce, A. H.; Castle, E.; Chandan, V.; Cheville, J.; Copland, J. A.; Farnell, M.; Flotte, T.; Giama, N.; Ho, T.; Kendrick, M.; Kocher, J. -P.; Kopp, K.; Moser, C.; Nagorney, D.; O'Brien, D.; O'Neill, B. P.; Patel, T.; Petersen, G.; Que, F.; Rivera, M.; Roberts, L.; Smallridge, R.; Smyrk, T.; Stanton, M.; Thompson, R. H.; Torbenson, M.; Yang, J. D.; Zhang, L.; Brimo, F.; Ajani, J. A.; Gonzalez, A. M. A.; Behrens, C.; Bondaruk, J.; Broaddus, R.; Czerniak, B.; Esmaeli, B.; Fujimoto, J.; Gershenwald, J.; Guo, C.; Lazar, A. J.; Logothetis, C.; Meric-Bernstam, F.; Moran, C.; Ramondetta, L.; Rice, D.; Sood, A.; Tamboli, P.; Thompson, T.; Troncoso, P.; Tsao, A.; Wistuba, I.; Carter, C.; Haydu, L.; Hersey, P.; Jakrot, V.; Kakavand, H.; Kefford, R.; Lee, K.; Long, G.; Mann, G.; Quinn, M.; Saw, R.; Scolyer, R.; Shannon, K.; Spillane, A.; Stretch, J.; Synott, M.; Thompson, J.; Wilmott, J.; Al-Ahmadie, H.; Chan, T. A.; Ghossein, R.; Gopalan, A.; Levine, D. A.; Reuter, V.; Singer, S.; Singh, B.; Tien, N. V.; Broudy, T.; Mirsaidi, C.; Nair, P.; Drwiega, P.; Miller, J.; Smith, J.; Zaren, H.; Park, J. -W.; Hung, N. P.; Kebebew, E.; Linehan, W. M.; Metwalli, A. R.; Pacak, K.; Pinto, P. A.; Schiffman, M.; Schmidt, L. S.; Vocke, C. D.; Wentzensen, N.; Worrell, R.; Yang, H.; Moncrieff, M.; Goparaju, C.; Melamed, J.; Pass, H.; Botnariuc, N.; Caraman, I.; Cernat, M.; Chemencedji, I.; Clipca, A.; Doruc, S.; Gorincioi, G.; Mura, S.; Pirtac, M.; Stancul, I.; Tcaciuc, D.; Albert, M.; Alexopoulou, I.; Arnaout, A.; Bartlett, J.; Engel, J.; Gilbert, S.; Parfitt, J.; Sekhon, H.; Thomas, G.; Rassl, D. M.; Rintoul, R. C.; Bifulco, C.; Tamakawa, R.; Urba, W.; Hayward, N.; Timmers, H.; Antenucci, A.; Facciolo, F.; Grazi, G.; Marino, M.; Merola, R.; de, Krijger, R.; Gimenez-Roqueplo, A. -P.; Piché, A.; Chevalier, S.; McKercher, G.; Birsoy, K.; Barnett, G.; Brewer, C.; Farver, C.; Naska, T.; Pennell, N. A.; Raymond, D.; Schilero, C.; Smolenski, K.; Williams, F.; Morrison, C.; Borgia, J. A.; Liptay, M. J.; Pool, M.; Seder, C. W.; Junker, K.; Omberg, L.; Dinkin, M.; Manikhas, G.; Alvaro, D.; Bragazzi, M. C.; Cardinale, V.; Carpino, G.; Gaudio, E.; Chesla, D.; Cottingham, S.; Dubina, M.; Moiseenko, F.; Dhanasekaran, R.; Becker, K. -F.; Janssen, K. -P.; Slotta-Huspenina, J.; Abdel-Rahman, M. H.; Aziz, D.; Bell, S.; Cebulla, C. M.; Davis, A.; Duell, R.; Elder, J. B.; Hilty, J.; Kumar, B.; Lang, J.; Lehman, N. L.; Mandt, R.; Nguyen, P.; Pilarski, R.; Rai, K.; Schoenfield, L.; Senecal, K.; Wakely, P.; Hansen, P.; Lechan, R.; Powers, J.; Tischler, A.; Grizzle, W. E.; Sexton, K. C.; Kastl, A.; Henderson, J.; Porten, S.; Waldmann, J.; Fassnacht, M.; Asa, S. L.; Schadendorf, D.; Couce, M.; Graefen, M.; Huland, H.; Sauter, G.; Schlomm, T.; Simon, R.; Tennstedt, P.; Olabode, O.; Nelson, M.; Bathe, O.; Carroll, P. R.; Chan, J. M.; Disaia, P.; Glenn, P.; Kelley, R. K.; Landen, C. N.; Phillips, J.; Prados, M.; Simko, J.; Smith-McCune, K.; VandenBerg, S.; Roggin, K.; Fehrenbach, A.; Kendler, A.; Sifri, S.; Steele, R.; Jimeno, A.; Carey, F.; Forgie, I.; Mannelli, M.; Carney, M.; Hernandez, B.; Campos, B.; Herold-Mende, C.; Jungk, C.; Unterberg, A.; von, Deimling, A.; Bossler, A.; Galbraith, J.; Jacobus, L.; Knudson, M.; Knutson, T.; Ma, D.; Milhem, M.; Sigmund, R.; Godwin, A. K.; Madan, R.; Rosenthal, H. G.; Adebamowo, C.; Adebamowo, S. N.; Boussioutas, A.; Beer, D.; Giordano, T.; Mes-Masson, A. -M.; Saad, F.; Bocklage, T.; Landrum, L.; Mannel, R.; Moore, K.; Moxley, K.; Postier, R.; Walker, J.; Zuna, R.; Feldman, M.; Valdivieso, F.; Dhir, R.; Luketich, J.; Pinero, E. M. M.; Quintero-Aguilo, M.; Carlotti, C. G.; Jr.; Dos, Santos, J. S.; Kemp, R.; Sankarankuty, A.; Tirapelli, D.; Catto, J.; Agnew, K.; Swisher, E.; Creaney, J.; Robinson, B.; Shelley, C. S.; Godwin, E. M.; Kendall, S.; Shipman, C.; Bradford, C.; Carey, T.; Haddad, A.; Moyer, J.; Peterson, L.; Prince, M.; Rozek, L.; Wolf, G.; Bowman, R.; Fong, K. M.; Yang, I.; Korst, R.; Rathmell, W. K.; Fantacone-Campbell, J. L.; Hooke, J. A.; Kovatich, A. J.; Shriver, C. D.; DiPersio, J.; Drake, B.; Govindan, R.; Heath, S.; Ley, T.; Van, Tine, B.; Westervelt, P.; Rubin, M. A.; Lee, J. I.; Aredes, N. D.; Mariamidze, A.; Van, Allen, E. M.; Cherniack, A. D.; Ciriello, G.; Sander, C.; Schultz, N.; The, Cancer, Genome, Atlas, Research, Network.tif
Genetic alterations in signaling pathways that control cell-cycle progression, apoptosis, and cell growth are common hallmarks of cancer, but the extent, mechanisms, and co-occurrence of alterations in these pathways differ between individual tumors and tumor types. Using mutations, copy-number changes, mRNA expression, gene fusions and DNA methylation in 9,125 tumors profiled by The Cancer Genome Atlas (TCGA), we analyzed the mechanisms and patterns of somatic alterations in ten canonical pathways: cell cycle, Hippo, Myc, Notch, Nrf2, PI-3-Kinase/Akt, RTK-RAS, TGFβ signaling, p53 and β-catenin/Wnt. We charted the detailed landscape of pathway alterations in 33 cancer types, stratified into 64 subtypes, and identified patterns of co-occurrence and mutual exclusivity. Eighty-nine percent of tumors had at least one driver alteration in these pathways, and 57% percent of tumors had at least one alteration potentially targetable by currently available drugs. Thirty percent of tumors had multiple targetable alterations, indicating opportunities for combination therapy. An integrated analysis of genetic alterations in 10 signaling pathways in >9,000 tumors profiled by TCGA highlights significant representation of individual and co-occurring actionable alterations in these pathways, suggesting opportunities for targeted and combination therapies.
Open Access
Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
(AIP Publishing, 2014) Zhang Z.-H.; Liu W.; Ju, Z.; Tan S.T.; Ji Y.; Zhang X.; Wang, L.; Kyaw, Z.; Sun, X. W.; Demir, Hilmi Volkan
InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.
Open Access
Record high external quantum efficiency of 19.2% achieved in light-emitting diodes of colloidal quantum wells enabled by hot-Injection shell growth
(WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2020) Liu, B.; Altıntaş, Yemliha; Wang, L.; Shendre, S.; Sharma, Manoj; Sun, H.; Mutlugün, Evren; Demir, Hilmi Volkan
Colloidal quantum wells (CQWs) are regarded as a highly promising class of optoelectronic materials, thanks to their unique excitonic characteristics of high extinction coefficients and ultranarrow emission bandwidths. Although the exploration of CQWs in light‐emitting diodes (LEDs) is impressive, the performance of CQW‐LEDs lags far behind other types of soft‐material LEDs (e.g., organic LEDs, colloidal‐quantum‐dot LEDs, and perovskite LEDs). Herein, high‐efficiency CQW‐LEDs reaching close to the theoretical limit are reported. A key factor for this high performance is the exploitation of hot‐injection shell (HIS) growth of CQWs, which enables a near‐unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films, and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape‐, composition‐, and device‐engineering, the CQW‐LEDs using CdSe/Cd0.25Zn0.75S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23 490 cd m−2, extremely saturated red color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.715, 0.283), and stable emission are obtained. The findings indicate that HIS‐grown CQWs enable high‐performance solution‐processed LEDs, which may pave the path for future CQW‐based display and lighting technologies.
Open Access
Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
(AIP Publishing, 2014) Zhang Z.-H.; Li, W.; Ju, Z.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang X.; Wang, L.; Sun, X. W.; Demir, Hilmi Volkan
InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.
Open Access
Solvent-assisted surface engineering for high-performance all-inorganic perovskite nanocrystal light-emitting diodes
(American Chemical Society, 2018) Wang, L.; Liu, B.; Zhao, X.; Demir, Hilmi Volkan; Gu, H.; Sun, H.
All-inorganic cesium halide perovskite nanocrystals have attracted much interest in optoelectronic applications for the sake of the readily adjustable band gaps, high photoluminescence quantum yield, pure color emission, and affordable cost. However, because of the ineluctable utilization of organic surfactants during the synthesis, the structural and optical properties of CsPbBr3 nanocrystals degrade upon transforming from colloidal solutions to solid thin films, which plagues the device operation. Here, we develop a novel solvent-assisted surface engineering strategy, producing high-quality CsPbBr3 thin films for device applications. A good solvent is first introduced as an assembly trigger to conduct assembly in a one-dimensional direction, which is then interrupted by adding a nonsolvent. The nonsolvent drives the adjacent nanoparticles connecting in a two-dimensional direction. Assembled CsPbBr3 nanocrystal thin films are densely packed and very smooth with a surface roughness of ∼4.8 nm, which is highly desirable for carrier transport in a light-emitting diode (LED) device. Meanwhile, the film stability is apparently improved. Benefiting from this facile and reliable strategy, we have achieved remarkably improved performance of CsPbBr3 nanocrystal-based LEDs. Our results not only enrich the methods of nanocrystal surface engineering but also shed light on developing high-performance LEDs.
Open Access
Spectrally wide-range-tunable, efficient, and bright colloidal light-emitting diodes of quasi-2D nanoplatelets enabled by engineered alloyed heterostructures
(American Chemical Society, 2020) Altıntaş, Yemliha; Liu, B.; Hernández-Martínez, P. L.; Gheshlaghi, Negar; Shabani, Farzan; Sharma, Manoj; Wang, L.; Sun, H.; Mutlugün, Evren; Demir, Hilmi Volkan
Recently, there has been tremendous interest in the synthesis and optoelectronic applications of quasi-two-dimensional colloidal nanoplatelets (NPLs). Thanks to the ultranarrow emission linewidth, high-extinction coefficient, and high photostability, NPLs offer an exciting opportunity for high-performance optoelectronics. However, until now, the applications of these NPLs are limited to available discrete emission ranges, limiting the full potential of these exotic materials as efficient light emitters. Here, we introduce a detailed systematic study on the synthesis of NPLs based on the alloying mechanisms in core/shell, core/alloyed shell, alloyed core/shell, and alloyed core/alloyed shell heterostructures. Through the engineering of the band gap supported by the theoretical calculations, we carefully designed and successfully synthesized the NPL emitters with continuously tunable emission. Unlike conventional NPLs showing discrete emission, here, we present highly efficient core/shell NPLs with fine spectral tunability from green to deep-red spectra. As an important demonstration of these efficient emitters, the first-time implementation of yellow NPL light-emitting diodes (LEDs) has been reported with record device performance, including the current efficiency surpassing 18.2 cd A–1, power efficiency reaching 14.8 lm W–1, and record luminance exceeding 46 900 cd m–2. This fine and wide-range color tunability in the visible range from stable and efficient core/shell NPLs is expected to be extremely important for the optoelectronic applications of the family of colloidal NPL emitters.
Open Access
Towards interactive data exploration
(Springer, 2019) Binnig, C.; Basık, Fuat; Buratti, B.; Çetintemel, U.; Chung, Y.; Crotty, A.; Cousins, C.; Ebert, D.; Eichmann, P.; Galakatos, A.; Hattasch, B.; Ilkhechi, A.; Kraska, T.; Shang, Z.; Tromba, I.; Usta, Arif; Utama, P.; Upfal, E.; Wang, L.; Weir, N.; Zeleznik, R.; Zgraggen, E.; Castellanos, M.; Chrysanthis, P.; Pelechrinis, K.
Enabling interactive visualization over new datasets at “human speed” is key to democratizing data science and maximizing human productivity. In this work, we first argue why existing analytics infrastructures do not support interactive data exploration and outline the challenges and opportunities of building a system specifically designed for interactive data exploration. Furthermore, we present the results of building IDEA, a new type of system for interactive data exploration that is specifically designed to integrate seamlessly with existing data management landscapes and allow users to explore their data instantly without expensive data preparation costs. Finally, we discuss other important considerations for interactive data exploration systems including benchmarking, natural language interfaces, as well as interactive machine learning.
Open Access
The voice of minority shareholders: Online voting and corporate social responsibility
(Elsevier, 2021-03-08) Feng, Y.; Pan, Y.; Wang, L.; Şensoy, Ahmet
In 2014, the Shenzhen Stock Exchange introduced “Rules for the Implementation of Online Voting” to standardize the implementation of online voting for its listed companies. Using this event as an exogenous shock, we design a difference-in-differences model to show that minority shareholders’ participation in online voting improves firms’ corporate social responsibility performance. We reveal that this improvement is achieved through minority shareholders’ positive influence on firms’ internal control and transparency and is more pronounced for private firms and firms with lower levels of profitability and less external monitoring. Accordingly, since the standardization of online voting, minority shareholders have played an important role in corporate governance and have a positive influence on firms’ sustainable development.