Browsing by Author "Lee I.-H."
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Item Open Access Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures(IEEE, 2010) Sarı, Emre; Akyuz, Özgün; Choi, E. -G.; Lee I.-H.; Baek J.H.; Demir, Hilmi VolkanCrystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.Item Open Access Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures(IEEE, 2009) Sarı, Emre; Nizamoğlu, Sedat; Lee I.-H.; Baek J.-H.; Demir, Hilmi VolkanWe report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.Item Open Access Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures(SPIE, 2011) Jang L.-W.; Ju J.-W.; Jeon J.-W.; Jeon, D.-W.; Choi J.-H.; Lee, S.-J.; Jeon, S.-R.; Baek J.-H.; Sarı, Emre; Demir, Hilmi Volkan; Yoon H.-D.; Hwang, S.-M.; Lee I.-H.We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.Item Open Access Förster-type nonradiative energy transfer directed from colloidal quantum dots to epitaxial quantum wells for light harvesting applications(Optical Society of America, 2011) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi VolkanWe report on Frster-type nonradiative energy transfer directed from CdSe/ZnS core/shell quantum dots to InGaN/GaN quantum wells with 69.6% efficiency at 1.527 ns-1 rate at room temperature for potential light harvesting and solar cells applications. © 2011 OSA.Item Open Access Investigation of excitonic effects in polar InGaN/GaN quantum heterostructures for enhanced quantum electroabsorption in blue(IEEE, 2007) Sarı, Emre; Nizamoğlu, Sedat; Özel, Tuncay; Koç, Aslı; Lee I.-H.; Baek J.H.; Demir, Hilmi VolkanItem Open Access Nanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gap(IEEE, 2009) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi VolkanRecently the photometric conditions for ultra-efficient solid-state lighting have been discussed [1-2]. These studies show that a luminous efficacy of optical radiation at 408 lm/Wopt and a color rendering index (CRI) of 90 at a correlated color temperature (CCT) of 3000 K are achievable at the same time. For this purpose light emitting diodes (LEDs) emitting in blue, green, yellow, and red colors at 463, 530, 573, and 614 nm with relative optical power levels of 1/8, 2/8, 2/8, and 3/8, are required, respectively [1-2]. Although InxGa1-xN material system is capable to cover the whole visible by changing the In composition (x), it is technically extremely challenging to obtain efficient green/yellow light emitting diodes especially at those wavelengths (i.e., at 530 nm and 573 nm, respectively) due to reduced internal quantum efficiency [2-4]. Furthermore, by using the (Al xGa1-x)1-yInyP quaternary alloy it is also possible to cover from 650 nm to 580 nm. However, the efficiencies significantly decrease towards green. Therefore, there exists a significant gap in the green-yellow spectral regions (known as "the green gap") to make efficient light emitting diodes. To address this green gap problem, we propose and demonstrate proof-of-concept nanocrystal (NCs) hybridized green/yellow light emitting diodes that rely on both radiative energy transfer and nonradiative energy transfer (i.e., FRET-Förster resonance energy transfer) for color conversion on near-ultraviolet (near-UV) LEDs.Item Open Access White light generating nonradiative energy transfer directly from epitaxial quantum wells to colloidal nanocrystal quantum dots(Optical Society of America, 2009) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi VolkanWe present white light generating nonradiative Förster resonance energy transfer at a rate of (2ns)-1 directly from epitaxial InGaN/GaN quantum wells to CdSe/ZnS heteronanocrystals in their close proximity at chromaticity-coordinates (x,y)=(0.42,0.39) and correlated-color-temperature CCT=3135K. ©2009 Optical Society of America.