Browsing by Author "Eren, Hamit"

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Open Access
Area-selective atomic layer deposition of noble metals: polymerized fluorocarbon layers as effective growth inhibitors
(AVS Science and Technology Society, 2021-01-29) Deminskyi, Petro; Haider, Ali; Eren, Hamit; Khan, Talha Masood; Bıyıklı, Necmi
The increasingly complex nanoscale three-dimensional and multilayered structures utilized in nanoelectronic, catalytic, and energy conversion/storage devices necessitate novel substrate-selective material deposition approaches featuring bottom-up and self-aligned precision processing. Here, we demonstrate the area-selective atomic layer deposition (AS-ALD) of two noble metals, Pt and Pd, by using a plasma-polymerized fluorocarbon layer as growth inhibition surfaces. The contact angle, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy measurements were performed to investigate the blocking ability of polymerized fluorocarbon (CFx) layers against ALD-grown metal films. Both Pt and Pd showed significant nucleation delays on fluorocarbon surfaces. Self-aligned film deposition is confirmed using this strategy by growing Pt and Pd on the microscale lithographically patterned CFx/Si samples. CFx blocking layer degradation during ozone exposure was analyzed using XPS measurements, which confirmed the oxygen physisorption as the main responsible surface reaction with further hydroxyl group formation on the CFx surface. Our work reveals that the CFx layer is compatible with an ozone coreactant until the blocking polymer cannot withstand oxygen physisorption. Our results could potentially be used to investigate and develop radical-assisted AS-ALD processes for a wider selection of materials.
Open Access
Atomic layer deposition of metal oxides on self-assembled peptide nanofiber templates for fabrication of functional nanomaterials
(2016-08) Eren, Hamit
There are mainly two basic approaches in nanostructured materials synthesis. The rst one is the top-down approach and requires material removal from a bulk substrate material by chemical, physical, mechanical or thermal means; acid etching, focused ion milling, and laser ablation are among these top-down synthesis techniques. It is a straightforward { albeit poor in material architecture control { method that has established its niche in today's high-volume CMOS transistor fabrication technology which already produces single-digit nanometerscale device features. On the other hand, bottom-up approach exploits ne-tuned materials assembly. Bottom-up approach is realized via direct self-assembly of target nanostructures or material growth on synthetic or natural nanotemplates. Bottom-up nanostructured materials synthesis o ers considerably wider spectrum of achievable material architectures and structural hierarchies. Synthesis of nanostructured materials on self-assembled soft nanotemplates is of signi cant importance because many biological systems utilize this very similar approach to construct complex biomolecule-templated materials. Peptide amphiphile (PA) molecules with their intrinsic property to self-assemble into nanostructures such as bers, present a versatile tool in inorganic material templating. PAs were used as soft templates in several studies for fabrication of nanoscale inorganic materials. Most of these studies are focused on in-solution material deposition on the surface of a template. Even though this approach allows successful material deposition, precise control over material thickness, uniformity, and high conformality is di cult to achieve in a repeatable manner. In order to circumvent this challenge, in this thesis, atomic layer deposition (ALD) technique was deployed for conformal coating of PA nanonetwork templates. ALD involves low-temperature iterative vapor-phase material deposition in a self-limiting fashion. In each deposition half-cycle, Ti- or Zn- containing volatile metalorganic complexes form a self-limiting uniform monolayer that consequently reacts with water vapor (H2O) as an oxygen precursor in the subsequent process half-cycle. As each half-cycle is separated with purge cycles, no gas-phase reactions occurs and material growth proceeds only with surface chemical ligand-exchange reactions. ALD approach allowed obtaining TiO2 or ZnO nanonetworks with tunable wall thickness and ultimate conformality. Obtained metal oxide-peptide hybrid materials were further treated di erently. In the case of TiO2, organic template was removed upon calcination at 450 C, a temperature at which amorphous titania transforms to anatase form. ZnO-peptide hybrid materials on the other hand, did not undergo any thermal processing, as ZnO already grows in wurtzite crystalline form during ALD process. In principle, nanostructured anatase TiO2 and wurtzite ZnO are wide bandgap semiconductors which can be used as photoanode materials. Nanostructured anodic materials still attract a great interest as the matter at nanoscale regimes can provide considerable enhancement in charge carrier separation, charge carrier transport, and active surface area. Here we demonstrate the fabrication of nanostructured TiO2 and ZnO on self-assembled soft templates. As a proof of principle, we utilized semiconducting TiO2 and ZnO in assembly of dye sensitized solar cells and studied material thickness e ect on device performance parameters such as open circuit voltage (Voc), short circuit current (Jsc), and ll factor. Three sets of nanostructured photoanodes with di erent TiO2 deposition cycles (100, 150, and 200) and ZnO deposition cycles (100, 125 and 150) were fabricated. TiO2 and ZnO nanonetworks in photoanodes form a system of interconnected nanotubes, which can facilitate electron transfer. Moreover, these networks are porous high-surface area materials and they can drastically increase number of sensitizer molecules attached to the semiconductor material surface.
Open Access
Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
(Elsevier, 2018) Orak, I.; Eren, Hamit; Bıyıklı, N.; Dâna, A.
In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and their applications were demonstrated with ultra-small platinum nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm and particle densities of about 2.5 × 1013 cm–b. The effect of Pt-NPs embedded on the storage layer for charging was investigated. The charging effect of ultra-small Pt-NPs the storage layer was observed using the electrical characteristics of TFFM. The Pt-NPs were observed by a high-resolution scanning electron microscopy (HR-SEM). The memory effect was manifested by hysteresis in the IDS-VDS and IDS-VGS curves. The charge storage capacity of the TFFM cells demonstrated that ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a promising candidate for memory devices. Moreover, ZnO TFFM showed a ION/IOFF ratio of up to 52 orders of magnitude and its threshold voltage (Vth) was approximately −4.1 V using Ids−a/b – Vgs curve. Fabricated TFFMs exhibited clear pinch-off and show n-type field effect transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs for improvement of devices were also discussed and they indicated that ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as alternative quantum dot structures.