Browsing by Author "Badali, Y."

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Open Access
21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode
(Institute of Electrical and Electronics Engineers, 2022-11-09) Çiçek, O.; Arslan, E.; Altındal, Ş.; Badali, Y.; Özbay, Ekmel
Sensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
Open Access
Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity
(Springer, 2020) Arslan, Engin; Badali, Y.; Altındal, Ş.; Özbay, Ekmel
The current–voltage (I–V) and capacitance–voltage (C–V) behaviors of the (Au/Ni)/HfAlO3/n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)–V curves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (ΦB0) were extracted using the slope and intercept of the ln(I)–V curve before and after the intersection point based on lighting power. Although the ΦB0 values decrease with increasing light power, n increases for two regions, and there is a strong linear relationship between them. The values of photo-current (Iph) increase with the increasing lighting power due to the formation of electron–hole pairs. The slope of the double-logarithmic Iph–P was changed from 0.422 to 0.852, respectively, at − 2 V and − 9 V, which indicates the ongoing distribution of Nss. In addition, the profile of surface states (Nss) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. The Nss–V curve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution of Nss and their restructuring and reordering under the effects of lighting and an electric field.
Open Access
Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics
(Elsevier Ltd, 2022-08-30) Badali, Y.; Arslan, Engin; Ulusoy Ghobadi, Turkan Gamze; Ozbay, Ekmel; Ozcelik, S.
Amorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ∼9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV−1 cm−2 at the Ga2O3–p-Si interface.