A novel effect of Electron Spin Resonance on electrical resistivity
Author
Singh, N.
Rani, Luxmi
Date
2018Source Title
Journal of Magnetism and Magnetic Materials
Print ISSN
0304-8853
Publisher
Elsevier
Volume
474
Pages
501 - 504
Language
English
Type
ArticleItem Usage Stats
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Abstract
We extend the well known phenomenon of magnetoresistance (extra resistivity of materials in transverse magnetic field) to a regime where in addition to a transverse magnetic field, a transverse microwave field of resonant frequency is also applied. In a magnetic field, electron spin levels are Zeeman split. In a resonant microwave field, we uncover a new channel of momentum relaxation in which electrons in upper Zeeman level can deexcite to lower Zeeman level by generating spin fluctuation excitation in the lattice (similar to what happens in Electron Spin Resonance (ESR) spectroscopy). An additional resistivity due to this mechanism is predicted in which momentum randomization of Zeeman split electrons happen via bosonic excitations (spin fluctuations). An order of magnitude of this additional resistivity is calculated. The whole work is based upon an extension of Einstein’s derivation of equilibrium Planckian formula to near equilibrium systems.
Keywords
Spin relaxation and scatteringElectron paramagnetic resonance
Relaxation
Magnetoresistance
General theory of resonances and relaxations
Theory of electronic transport
Scattering mechanisms