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      A novel effect of Electron Spin Resonance on electrical resistivity

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      Author
      Singh, N.
      Rani, Luxmi
      Date
      2018
      Source Title
      Journal of Magnetism and Magnetic Materials
      Print ISSN
      0304-8853
      Publisher
      Elsevier
      Volume
      474
      Pages
      501 - 504
      Language
      English
      Type
      Article
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      Abstract
      We extend the well known phenomenon of magnetoresistance (extra resistivity of materials in transverse magnetic field) to a regime where in addition to a transverse magnetic field, a transverse microwave field of resonant frequency is also applied. In a magnetic field, electron spin levels are Zeeman split. In a resonant microwave field, we uncover a new channel of momentum relaxation in which electrons in upper Zeeman level can deexcite to lower Zeeman level by generating spin fluctuation excitation in the lattice (similar to what happens in Electron Spin Resonance (ESR) spectroscopy). An additional resistivity due to this mechanism is predicted in which momentum randomization of Zeeman split electrons happen via bosonic excitations (spin fluctuations). An order of magnitude of this additional resistivity is calculated. The whole work is based upon an extension of Einstein’s derivation of equilibrium Planckian formula to near equilibrium systems.
      Keywords
      Spin relaxation and scattering
      Electron paramagnetic resonance
      Relaxation
      Magnetoresistance
      General theory of resonances and relaxations
      Theory of electronic transport
      Scattering mechanisms
      Permalink
      http://hdl.handle.net/11693/53061
      Published Version (Please cite this version)
      https://dx.doi.org/10.1016/j.jmmm.2018.11.033
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