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dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorGasanly, N. M.en_US
dc.date.accessioned2019-03-22T10:27:49Z
dc.date.available2019-03-22T10:27:49Z
dc.date.issued2002en_US
dc.identifier.issn1012-0386
dc.identifier.urihttp://hdl.handle.net/11693/50698
dc.description.abstractA number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.en_US
dc.language.isoEnglishen_US
dc.source.titleDefect and Diffusion Forumen_US
dc.relation.isversionofhttps://doi.org/10.4028/www.scientific.net/DDF.2]0-212.61en_US
dc.subjectChalcogenidesen_US
dc.subjectDefectsen_US
dc.subjectLayered Semiconductorsen_US
dc.subjectOptical propertiesen_US
dc.titleDefect luminescence in some layered binary chalcogenide semiconductorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage61en_US
dc.citation.epage70en_US
dc.citation.volumeNumber210-212en_US
dc.identifier.doi10.4028/www.scientific.net/DDF.2]0-212.61en_US
dc.publisherScientific.Neten_US
dc.contributor.bilkentauthorAydınlı, Atilla
dc.identifier.eissn1662-9507


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