Laser writing of nanostructures deep inside Gallium Arsenide (GaAs)
Optics InfoBase Conference Papers
OSA - The Optical Society
Part F113-CLEOPR 2018
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Recently, we have showed a direct laser writing method that enables the first subsurface modifications and functional devices created deep inside silicon. Here, we extend the technique demonstrating the first controlled subsurface nanostructures in GaAs.