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dc.contributor.authorGürdal, Armağanen_US
dc.contributor.authorYilmaz, Burak Alptugen_US
dc.contributor.authorCengiz, Ömeren_US
dc.contributor.authorŞen, Özlemen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialMadrid, Spainen_US
dc.date.accessioned2019-02-21T16:08:33Z
dc.date.available2019-02-21T16:08:33Z
dc.date.issued2018en_US
dc.identifier.isbn9782874870514
dc.identifier.urihttp://hdl.handle.net/11693/50420
dc.descriptionDate of Conference: 23-27 Sept. 2018en_US
dc.description.abstractAn X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (P AE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
dc.description.sponsorshipThis work is supported by the projects DPT-HAMIT, DPT-FOTON, NATO-SET-193 and TUBITAK under Project Nos., 113E331, 109A015, 109E301. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences.
dc.language.isoEnglish
dc.source.title2018 48th European Microwave Conference (EuMC)en_US
dc.relation.isversionofhttps://doi.org/10.23919/EuMC.2018.8541703
dc.subjectAIGaN/GaNen_US
dc.subjectCoplanar waveguideen_US
dc.subjectGaN HEMTsen_US
dc.subjectMMICen_US
dc.subjectPower Amplifieren_US
dc.titleX Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applicationsen_US
dc.typeConference Paperen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage1313en_US
dc.citation.epage1316en_US
dc.identifier.doi10.23919/EuMC.2018.8541703
dc.publisherIEEE
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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