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Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016-02)
GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used ...
Enhanced photoresponse of conformal TiO2/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition
(AVS Science and Technology Society, 2015)
In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor ...
Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
(A I P Publishing LLC, 2015)
Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal-semiconductor-metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) ...
Zno nanostructures via hydrothermal synthesis on atomic layer deposited seed-layers
(IEEE, 2015)
The original results of two different types of ZnO nanostructures grown via hydrothermal synthesis on ZnO seed-layers coated by atomic layer deposition process on Si substrates were presented. Scanning electron microscopy ...
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)
Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ...
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)
Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ...
Silicon nanoparticle charge trapping memory cell
(Wiley-VCH Verlag, 2014)
A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and ...
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015)
Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the ...
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
(IEEE, 2016)
In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force ...
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
(IEEE, 2016)
GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ...