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Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015)
Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ...
Self-assembled peptide nanofiber templated ALD growth of TiO2 and ZnO semiconductor nanonetworks
(Wiley - V C H Verlag GmbH & Co. KGaA, 2016)
Here peptide amphiphile (PA) nanofiber network is exploited as a three‐dimensional soft template to construct anatase TiO2 and wurtzite ZnO nanonetworks. Atomic layer deposition (ALD) technique is used to coat the organic ...
Enhanced photoresponse of conformal TiO2/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition
(AVS Science and Technology Society, 2015)
In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor ...
Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
(Elsevier, 2018)
In this study, a methodology for producing highly controlled and uniformly dispersed metal nanoparticles were
developed by atomic layer deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM) cells and
their ...
Enhanced photocatalytic activity of homoassembled ZnO nanostructures on electrospun polymeric nanofibers: a combination of atomic layer deposition and hydrothermal growth
(Elsevier, 2014)
We report on the synthesis and photocatalytic activity (PCA) of electrospun poly(acrylonitrile) (PAN) nanofibrous mat decorated with nanoneedles of zinc oxide (ZnO). Apart from a detailed morphological and structural ...
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)
Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ...
Role of zinc interstitials and oxygen vacancies of ZnO in photocatalysis: a bottom-up approach to control the defect density
(Royal Society of Chemistry, 2014-06-09)
Oxygen vacancies (VOs) in ZnO are well-known to enhance photocatalytic activity (PCA) despite various other intrinsic crystal defects. In this study, we aim to elucidate the effect of zinc interstitials (Zn i) and VOs on ...
Ultra-low-cost near-infrared photodetectors on silicon
(SPIE, 2015-02)
We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...
Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs
(IOP, 2019-07)
In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ...
97 percent light absorption in an ultrabroadband frequency range utilizing an ultrathin metal layer: randomly oriented, densely packed dielectric nanowires as an excellent light trapping scaffold
(Royal Society of Chemistry, 2017)
In this paper, we propose a facile and large scale compatible design to obtain perfect ultrabroadband light absorption using metal-dielectric core-shell nanowires. The design consists of atomic layer deposited (ALD) Pt ...