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dc.contributor.authorEl-Atab, N.en_US
dc.contributor.authorChowdhury, F. I.en_US
dc.contributor.authorUlusoy, Türkan Gamzeen_US
dc.contributor.authorGhobadi, Amiren_US
dc.contributor.authorNazirzadeh, Aminen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.coverage.spatialSendai, Japanen_US
dc.date.accessioned2018-04-12T11:48:50Z
dc.date.available2018-04-12T11:48:50Z
dc.date.issued2016en_US
dc.identifier.isbn9781509039142
dc.identifier.urihttp://hdl.handle.net/11693/37714
dc.descriptionDate of Conference: 22-25 Aug. 2016en_US
dc.description.abstractIn this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.en_US
dc.language.isoEnglishen_US
dc.source.title2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/NANO.2016.7751340en_US
dc.subjectAtomic force microscopyen_US
dc.subjectDepositionen_US
dc.subjectElectron affinityen_US
dc.subjectElectronic propertiesen_US
dc.subjectNanotechnologyen_US
dc.subjectNear infrared spectroscopyen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectZinc oxideen_US
dc.subjectNano-islandsen_US
dc.subjectUV-vis-NIR spectroscopyen_US
dc.subjectZinc oxide (ZnO)en_US
dc.subjectAtomic layer depositionen_US
dc.titleGrowth of ∼3-nm ZnO nano-islands using Atomic layer depositionen_US
dc.typeConference Paperen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage687en_US
dc.citation.epage689en_US
dc.identifier.doi10.1109/NANO.2016.7751340en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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