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dc.contributor.authorBayrak, T.en_US
dc.contributor.authorOzgit-Akgun, C.en_US
dc.contributor.authorGoldenberg, E.en_US
dc.date.accessioned2018-04-12T11:11:18Z
dc.date.available2018-04-12T11:11:18Z
dc.date.issued2017en_US
dc.identifier.issn0022-3093
dc.identifier.urihttp://hdl.handle.net/11693/37360
dc.description.abstractAmong perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Non-Crystalline Solidsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.jnoncrysol.2017.08.036en_US
dc.subjectBaSrTiO3en_US
dc.subjectDielectric constanten_US
dc.subjectEllipsometryen_US
dc.subjectOptical constantsen_US
dc.subjectTunabilityen_US
dc.subjectAmorphous filmsen_US
dc.subjectAmorphous materialsen_US
dc.subjectAnnealingen_US
dc.subjectCapacitanceen_US
dc.subjectDepositionen_US
dc.subjectEllipsometryen_US
dc.subjectLight transmissionen_US
dc.subjectMagnetron sputteringen_US
dc.subjectMicrostructureen_US
dc.subjectOptical constantsen_US
dc.subjectPermittivityen_US
dc.subjectRefractive indexen_US
dc.subjectScanning electron microscopyen_US
dc.subjectThin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectBaSrTiO3en_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectOptical and electrical propertiesen_US
dc.subjectPerovskite oxide materialsen_US
dc.subjectPolycrystalline thin filmen_US
dc.subjectPost deposition annealingen_US
dc.subjectRadio frequency magnetron sputteringen_US
dc.subjectTunabilitiesen_US
dc.subjectOptical filmsen_US
dc.titleStructural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealingen_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.departmentNANOTAM - Nanotechnology Research Center
dc.citation.spage76en_US
dc.citation.epage84en_US
dc.citation.volumeNumber475en_US
dc.identifier.doi10.1016/j.jnoncrysol.2017.08.036en_US
dc.publisherElsevier BV * North-Hollanden_US
dc.embargo.release2019-11-01en_US
dc.identifier.eissn1873-4812en_US


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