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dc.contributor.authorBahariqushchi R.en_US
dc.contributor.authorGundogdu S.en_US
dc.contributor.authorAydinli A.en_US
dc.date.accessioned2018-04-12T11:10:10Z
dc.date.available2018-04-12T11:10:10Z
dc.date.issued2017en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/37323
dc.description.abstractMultilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed. © 2017 Elsevier Ltden_US
dc.language.isoEnglishen_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2017.02.037en_US
dc.subjectAnnealingen_US
dc.subjectDepositionen_US
dc.subjectFilm preparationen_US
dc.subjectGermaniumen_US
dc.subjectHigh resolution transmission electron microscopyen_US
dc.subjectNanocrystalsen_US
dc.subjectPlasma CVDen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSilicon nitrideen_US
dc.subjectSilicon oxidesen_US
dc.subjectCrystallinitiesen_US
dc.subjectGe nanocrystalsen_US
dc.subjectGermanium nanocrystalsen_US
dc.subjectGrowth directionsen_US
dc.subjectPlasma enhanced chemical vapor depositions (PE CVD)en_US
dc.subjectSilicon nitride matrixen_US
dc.subjectSize dependenten_US
dc.subjectVisible photoluminescenceen_US
dc.subjectMultilayersen_US
dc.titleGe nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage308en_US
dc.citation.epage315en_US
dc.citation.volumeNumber104en_US
dc.identifier.doi10.1016/j.spmi.2017.02.037en_US
dc.publisherAcademic Pressen_US
dc.embargo.release2019-04-01en_US


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