Transport properties of epitaxial graphene grown on SiC substrate
Aygar, A. M.
Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics
197 - 201
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In this study, the Hall effect measurement of graphene on SiC substrate was carried out as a function of temperature (12-300 K). Hall data were first analyzed to extract the temperature dependent mobilities and carrier densities of the bulk (3D) and two dimensional (2D) channels using a Simple Parallel Conduction Extraction Method (SPCEM) successfully. High carrier mobility 2.296 cm2/V.s from the graphene layer and low carrier mobility 813 cm2/V.s from the SiC were obtained at room temperature. By using SPCEM extracted data, 3D and 2D scattering mechanisms were analyzed and the dominant scattering mechanisms in low and high temperature regimes were determined. It was found that the transport was mainly determined by scattering processes in 2D graphene.