Show simple item record

dc.contributor.advisorOral, Ahmet
dc.contributor.authorÖzdemir, Serdar
dc.date.accessioned2016-07-01T11:00:59Z
dc.date.available2016-07-01T11:00:59Z
dc.date.issued2004
dc.identifier.urihttp://hdl.handle.net/11693/29533
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractScanning Hall Probe Microscopy has become a widely used method for magnetic field measurements in the last decade. For Scanning Hall Probe Microscopy, low noise Hall sensors are fabricated from GaAs and InAs structures using optical lithography techniques. Noise analysis of both types of sensors are done at 77 K and 300 K for various Hall currents. Minimum detectable magnetic fields are calculated from these noise measurements. The range of the Hall currents that makes the sensors work most efficiently are also calculated.en_US
dc.description.statementofresponsibilityÖzdemir, Serdaren_US
dc.format.extentxii, 60 leavesen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectScanning Hall Probe Microscopyen_US
dc.subjectmagnetic fielden_US
dc.subjectHall sensoren_US
dc.subject.lccQH212.S3 O93 2004en_US
dc.subject.lcshScanning probe microscopy.en_US
dc.titleFabrication and characterization of GaAs and InAs hall sensorsen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US
dc.identifier.itemidBILKUTUPB083747


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record