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dc.contributor.authorEl-Atab, N.en_US
dc.contributor.authorÖzcan, Ayşeen_US
dc.contributor.authorAlkış, Sabrien_US
dc.contributor.authorOkyay, Ali K.en_US
dc.contributor.authorNayfeh, A.en_US
dc.coverage.spatialToronto, ON, Canadaen_US
dc.date.accessioned2016-02-08T12:27:24Z
dc.date.available2016-02-08T12:27:24Z
dc.date.issued2014-08en_US
dc.identifier.urihttp://hdl.handle.net/11693/28696
dc.descriptionDate of Conference: 18-21 Aug. 2014en_US
dc.description.abstractIn this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication and filtration. The active layer of the memory was deposited by Atomic Layer Deposition (ALD) and spin coating technique was used to deliver the Si-NPs across the sample. The nanoparticles provided a good retention of charges (>10 years) in the memory cells and allowed for a large threshold voltage (Vt) shift (3.4 V) at reduced programming voltages (1 V). The addition of ZnO to the charge trapping media enhanced the electric field across the tunnel oxide and allowed for larger memory window at lower operating voltages. © 2014 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014en_US
dc.relation.isversionofhttps://doi.org/10.1109/NANO.2014.6968168en_US
dc.subjectAtomic layer depositionen_US
dc.subjectCharge trappingen_US
dc.subjectDeionized wateren_US
dc.subjectElectric fieldsen_US
dc.subjectLaser ablationen_US
dc.subjectNanoparticlesen_US
dc.subjectSiliconen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectThreshold voltageen_US
dc.subjectWater filtrationen_US
dc.subjectZinc oxideen_US
dc.subjectActive Layeren_US
dc.subjectCharge trapping memoryen_US
dc.subjectMemory windowen_US
dc.subjectOperating voltageen_US
dc.subjectProgramming voltageen_US
dc.subjectSi nanoparticlesen_US
dc.subjectSilicon nanoparticlesen_US
dc.subjectTunnel oxidesen_US
dc.subjectSilicon wafersen_US
dc.title2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devicesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage505en_US
dc.citation.epage509en_US
dc.identifier.doi10.1109/NANO.2014.6968168en_US
dc.publisherIEEEen_US


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