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dc.contributor.authorAgan, S.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T12:26:14Z
dc.date.available2016-02-08T12:26:14Z
dc.date.issued2009en_US
dc.identifier.urihttp://hdl.handle.net/11693/28651
dc.description.abstractWe have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009en_US
dc.subjectCross section TEMen_US
dc.subjectEffect of annealingen_US
dc.subjectEnergy dispersive x-rayen_US
dc.subjectGe nanocrystalsen_US
dc.subjectHigh resolutionen_US
dc.subjectNitrogen atmospheresen_US
dc.subjectSi substratesen_US
dc.subjectSiGe nanocrystalsen_US
dc.subjectElectron energy loss spectroscopyen_US
dc.subjectGermaniumen_US
dc.subjectPhotoelectronsen_US
dc.subjectSilicon oxidesen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectNanocrystalsen_US
dc.titleSiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiO x mul tila yersen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.citation.spage77en_US
dc.citation.epage80en_US


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