High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
2009 IEEE LEOS Annual Meeting Conference Proceedings
303 - 304
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Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.
Band gap energy