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dc.contributor.authorTaşçıoğlu, I.en_US
dc.contributor.authorAydemir, U.en_US
dc.contributor.authorŞafak, Y.en_US
dc.contributor.authorÖzbay, E.en_US
dc.date.accessioned2016-02-08T12:24:20Z
dc.date.available2016-02-08T12:24:20Z
dc.date.issued2010-03-28en_US
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/11693/28581
dc.description.abstractThe profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N ss can be attributed to reordering and restructure of surface charges. The value of series R s decreases with decreasing temperature. This behavior of R s is in obvious disagreement with that reported in the literature. It is found that the N ss and R s of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al xGa 1-XN/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature.en_US
dc.language.isoEnglishen_US
dc.source.titleSurface and Interface Analysisen_US
dc.relation.isversionofhttps://doi.org/10.1002/sia.3249en_US
dc.subject(Ni/Au)/AlGaN/AlN/GaN heterostructuresen_US
dc.subjectFrequency dependenceen_US
dc.subjectInterface statesen_US
dc.subjectNegative capacitanceen_US
dc.subjectSeries resistanceen_US
dc.titleTemperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructuresen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Centeren_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage812en_US
dc.citation.epage815en_US
dc.citation.volumeNumber42en_US
dc.citation.issueNumber6-7en_US
dc.identifier.doi10.1002/sia.3249en_US
dc.publisherWileyen_US
dc.identifier.eissn1096-9918


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