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dc.contributor.authorOnbasli, M.C.en_US
dc.contributor.authorYesilyurt, Alperen_US
dc.contributor.authorYu H.Y.en_US
dc.contributor.authorNayfeh, A.M.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialDenver, CO, USAen_US
dc.date.accessioned2016-02-08T12:20:33Z
dc.date.available2016-02-08T12:20:33Z
dc.date.issued2010en_US
dc.identifier.urihttp://hdl.handle.net/11693/28434
dc.descriptionDate of Conference: 7-11 Nov. 2010en_US
dc.description.abstractSilicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title2010 23rd Annual Meeting of the IEEE Photonics Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PHOTONICS.2010.5698995en_US
dc.subjectEpitaxial techniquesen_US
dc.subjectHigh-quality filmsen_US
dc.subjectLow-dislocation densityen_US
dc.subjectLow-leakage currenten_US
dc.subjectLower costen_US
dc.subjectMultiquantum wellsen_US
dc.subjectNanostructuralen_US
dc.subjectQuantum wellen_US
dc.subjectSilicon germaniumen_US
dc.subjectTEMen_US
dc.subjectXPSen_US
dc.subjectGermaniumen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleSilicon-germanium multi-quantum wells for extended functionality and lower cost integrationen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage530en_US
dc.citation.epage531en_US
dc.identifier.doi10.1109/PHOTONICS.2010.5698995en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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