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dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOzgit-Akgun, Çağlaen_US
dc.contributor.authorGoldenberg, Edaen_US
dc.contributor.authorHaider, Alien_US
dc.contributor.authorKızır, Sedaen_US
dc.contributor.authorUyar, Tameren_US
dc.contributor.authorBolat, Samien_US
dc.contributor.authorTekcan, Buraken_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialKiev, Ukraineen_US
dc.date.accessioned2016-02-08T12:18:57Z
dc.date.available2016-02-08T12:18:57Z
dc.date.issued2015en_US
dc.identifier.urihttp://hdl.handle.net/11693/28374
dc.descriptionDate of Conference: 21-24 April 2015en_US
dc.description.abstractHollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ELNANO.2015.7146876en_US
dc.subjectAtomic layer depositionen_US
dc.subjectAtomsen_US
dc.subjectCathodesen_US
dc.subjectDepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectLow temperature effectsen_US
dc.subjectNanofibersen_US
dc.subjectNanostructuresen_US
dc.subjectNanotechnologyen_US
dc.subjectNitridesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectTemperatureen_US
dc.subjectThin film transistorsen_US
dc.subjectHollow cathodesen_US
dc.subjectHollow nanofibersen_US
dc.subjectIII-Nitrideen_US
dc.subjectLow impurity concentrationsen_US
dc.subjectLow temperature synthesisen_US
dc.subjectLow temperaturesen_US
dc.subjectProof of concepten_US
dc.subjectUV photodetectorsen_US
dc.subjectThin filmsen_US
dc.titleHollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructuresen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage218en_US
dc.citation.epage221en_US
dc.identifier.doi10.1109/ELNANO.2015.7146876en_US
dc.publisherIEEEen_US


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