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dc.contributor.authorAta, Erhan P.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorDemirel, Ekremen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorOnat, B.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorTuttle, G.en_US
dc.coverage.spatialSan Francisco, CA, USAen_US
dc.date.accessioned2016-02-08T11:59:36Zen_US
dc.date.available2016-02-08T11:59:36Zen_US
dc.date.issued1998en_US
dc.identifier.urihttp://hdl.handle.net/11693/27687
dc.descriptionDate of Conference: 3-8 May 1998en_US
dc.descriptionConference Name: Conference on Lasers and Electro-Optics, CLEO 1998en_US
dc.description.abstractThe top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of the Conference on Lasers and Electro-Optics, CLEO 1998en_US
dc.relation.isversionofhttps://doi.org/10.1109/CLEO.1998.676546en_US
dc.subjectCapacitorsen_US
dc.subjectFabricationen_US
dc.subjectFourier transformsen_US
dc.subjectLight sourcesen_US
dc.subjectMonochromatorsen_US
dc.subjectOhmic contactsen_US
dc.subjectOptical communicationen_US
dc.subjectOptical interconnectsen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotodetectorsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectResonanceen_US
dc.subjectResonant cavity enhanced photodetectorsen_US
dc.subjectSchottky photodiodesen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed resonant-cavity-enhanced Schottky photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage500en_US
dc.identifier.doi10.1109/CLEO.1998.676546en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorBıyıklı, Necmi


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