Show simple item record

dc.contributor.authorSalihoğlu, O.en_US
dc.contributor.authorMuti, Abdullahen_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialBaltimore, Maryland, United Statesen_US
dc.date.accessioned2016-02-08T11:59:19Zen_US
dc.date.available2016-02-08T11:59:19Zen_US
dc.date.issued2014en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27674en_US
dc.descriptionDate of Conference: 5-9 May 2014en_US
dc.descriptionConference Name: SPIE Defense and Security Symposium, 2014en_US
dc.description.abstractCommercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises from bulk and surface contributions. Recent band structure engineering studies significantly suppressed the bulk contribution of the type-II superlattice infrared photodetectors (N structure, M structure, W structure). In this letter, we will present improved dark current results for unipolar barrier complex supercell superlattice system which is called as "N structure". The unique electronic band structure of the N structure increases electron-hole overlap under bias, significantly. N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Despite the difficulty of perfect lattice matching of InAs and AlSb, such a design is expected to reduce dark current. Experiments were carried out on Single pixel with mesa sizes of 100 × 100 - 700 × 700 μm photodiodes. Temperature dependent dark current with corresponding R0A resistance values are reported.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE Vol. 9070, Infrared Technology and Applications XLen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2050316en_US
dc.subjectBarrieren_US
dc.subjectInAs/GaSben_US
dc.subjectN designen_US
dc.subjectPassivationen_US
dc.subjectPhotodetectoren_US
dc.subjectSuperlatticeen_US
dc.subjectSiO2en_US
dc.titleLow dark current N structure superlattice MWIR photodetectorsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1en_US
dc.citation.epage6en_US
dc.citation.volumeNumber9070en_US
dc.identifier.doi10.1117/12.2050316en_US
dc.publisherSPIEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record