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dc.contributor.authorSerpengüzel, Alien_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorBek, Alpanen_US
dc.coverage.spatialSan Jose, California, United Statesen_US
dc.date.accessioned2016-02-08T11:59:05Zen_US
dc.date.available2016-02-08T11:59:05Zen_US
dc.date.issued1998en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27665en_US
dc.descriptionDate of Conference: 24-30 January 1998en_US
dc.descriptionConference Name: SPIE Optoelectronics and High-Power Lasers and Applications, 1998en_US
dc.description.abstractFabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride - air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE Vol. 3283, Physics and Simulation of Optoelectronic Devices VIen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.316689en_US
dc.subjectAmorphous siliconen_US
dc.subjectFabry-Peroten_US
dc.subjectMicrocavityen_US
dc.subjectOptoelectronicsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectResonatorsen_US
dc.subjectSpontaneous emissionen_US
dc.subjectThin filmsen_US
dc.titleMicrocavity effects in the photoluminescence of hydrogenated amorphous silicon nitrideen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage252en_US
dc.citation.epage259en_US
dc.citation.volumeNumber3283en_US
dc.identifier.doi10.1117/12.316689en_US
dc.publisherSPIEen_US


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