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dc.contributor.authorCengiz, Ömeren_US
dc.contributor.authorŞen, Özlemen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialRome, Italy
dc.date.accessioned2016-02-08T11:58:02Z
dc.date.available2016-02-08T11:58:02Z
dc.date.issued2014-10en_US
dc.identifier.urihttp://hdl.handle.net/11693/27619
dc.descriptionDate of Conference: 6-9 Oct. 2014
dc.descriptionConference name: 44th European Microwave Conference, 2014
dc.description.abstractThis paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.en_US
dc.language.isoEnglishen_US
dc.source.titleEuropean Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conferenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/EuMC.2014.6986731en_US
dc.subjectAlGaN/GaNen_US
dc.subjectHEMTsen_US
dc.subjectMMIC power amplifieren_US
dc.subjectRadiationen_US
dc.subjectSpaceen_US
dc.subjectAmplifiers (electronic)en_US
dc.subjectFrequency bandsen_US
dc.subjectGallium nitrideen_US
dc.subjectHeat radiationen_US
dc.subjectMicrowave amplifiersen_US
dc.subjectSilicon carbideen_US
dc.subjectHigh power amplifieren_US
dc.subjectMMIC amplifiersen_US
dc.subjectRadiation hardnessen_US
dc.subjectSmall signal gainen_US
dc.subjectPower amplifiersen_US
dc.titleHigh power K-band GaN on SiC CPW monolithic power amplifieren_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1492en_US
dc.citation.epage1495en_US
dc.identifier.doi10.1109/EuMC.2014.6986731en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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