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dc.contributor.authorBulutay, C.en_US
dc.contributor.authorRidley, B. K.en_US
dc.contributor.authorZakhleniuk, N. A.en_US
dc.date.accessioned2016-02-08T11:56:59Z
dc.date.available2016-02-08T11:56:59Z
dc.date.issued2002en_US
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/11693/27577
dc.description.abstractMaterial properties of AlN, particularly its wide band gap around 6 eV, warrant its operation in the high-field transport regimes reaching MV/cm fields. In this theoretical work, we examine the full-band scattering of conduction band electrons in AlN due to polar optical phonon (POP) emission, which is the main scattering channel at high fields. First, we obtain the band structure for the wurtzite phase of AlN using the empirical pseudopotential method. Scattering rates along the full length of several high-symmetry directions are computed efficiently through the Lehmann-Taut Brillouin zone integration technique. In order to shed light on the behaviour of the velocity-field characteristics at extremely high electric fields, in the order of a few MV/cm, we resort to an Esaki-Tsu estimation. Comparison of these results for AlN is made with our similar work on GaN. With typically more than 50% higher POP scattering rate compared to GaN, AlN has poorer high-field prospects. Availability of these data for AlN and GaN paves the way for practical assessment of the high-energy electron dynamics for the ternary alloy, AlGaN.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica B : Condensed Matteren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0921-4526(01)01368-0en_US
dc.subjectBrillouin zone integrationen_US
dc.subjectNegative differential conductivityen_US
dc.subjectPolar optical phonon scatteringen_US
dc.subjectWide band-gap semiconductorsen_US
dc.subjectElectric fieldsen_US
dc.subjectElectron scatteringen_US
dc.subjectEnergy gapen_US
dc.subjectPhononsen_US
dc.subjectRelaxation processesen_US
dc.subjectPolar optical phonon (POP) emissionen_US
dc.subjectAluminum nitrideen_US
dc.titleHigh-energy electron relaxation and full-band electron dynamics in aluminium nitrideen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.citation.spage63en_US
dc.citation.epage67en_US
dc.citation.volumeNumber314en_US
dc.citation.issueNumber1-4en_US
dc.identifier.doi10.1016/S0921-4526(01)01368-0en_US
dc.publisherElsevier Science B.V.en_US


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