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dc.contributor.authorFardmanesh, M.en_US
dc.contributor.authorSchubert, J.en_US
dc.contributor.authorAkram, R.en_US
dc.contributor.authorBanzet, M.en_US
dc.contributor.authorZander, W.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorSchilling, M.en_US
dc.contributor.authorKrause, H-J.en_US
dc.date.accessioned2016-02-08T11:56:50Z
dc.date.available2016-02-08T11:56:50Z
dc.date.issued2002en_US
dc.identifier.issn0921-4534
dc.identifier.urihttp://hdl.handle.net/11693/27570
dc.description.abstractStep edge junction (SEJ) rf-SQUIDs were made of 200 nm thick YBCO films on LaAlO3(100) substrates using pulsed laser deposition technique. The steps on the substrates were developed using a combination of stationary and rotating angled argon ion beams with different beam energies and intensities. While sharp clean steps with heights up to 300 nm were obtained on the substrates using the combinatorial ion beam etching (IBE) process, very shallow ramp-type surfaces were found developing on the bottom of the trench, close to the steps. The ramp-type surfaces were found to be a source of hole-type defects in the films grown at the step edges. High quality films could be obtained on the flat regions away from the steps. Higher defect densities in the films close to the SEJs resulted in devices with higher 1/f noise and wider spread of the junction parameters. The 1/f noise of such devices increased with decreasing temperature. High quality films on sharp clean steps with flat substrate surfaces, developed using optimized combinatorial IBE process, resulted in higher yield of low 1/f noise SQUIDs. The Ic of the junctions and hence the working temperature of the SQUID could also be controlled by the junction width and the step height. © 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica C: Superconductivity and its Applicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0921-4534(02)00680-9en_US
dc.subject1/f noiseen_US
dc.subjectrf-SQUIDen_US
dc.subjectStep edge Josephson junctionen_US
dc.subjectYBCO thin filmen_US
dc.subjectEtchingen_US
dc.subjectFilm growthen_US
dc.subjectGrain boundariesen_US
dc.subjectIon beamsen_US
dc.subjectJosephson junction devicesen_US
dc.subjectMicrostructureen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSemiconductor junctionsen_US
dc.subjectSubstratesen_US
dc.subjectThin filmsen_US
dc.subjectIon beam etching (IBE)en_US
dc.subjectSQUIDsen_US
dc.titleDependence of the substrate structure and the film growth at the junction of YBCO SEJ rf-SQUIDs on the IBE process and effects on the SQUID's characteristicsen_US
dc.typeConference Paperen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage240en_US
dc.citation.epage244en_US
dc.citation.volumeNumber372-376en_US
dc.citation.issueNumberPART 1en_US
dc.identifier.doi10.1016/S0921-4534(02)00680-9en_US
dc.publisherElsevieren_US


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