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dc.contributor.authorÖzbay, E.en_US
dc.contributor.authorKimukin I.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2016-02-08T11:54:54Z
dc.date.available2016-02-08T11:54:54Z
dc.date.issued2003en_US
dc.identifier.issn0277786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27493
dc.description.abstractIn this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs and InGaAs based RCE photodiodes. For RCE GaAs Schottky type photodiodes, we have achieved peak quantum efficiencies of 50% and 75% with semi-transparent (Au) and transparent (indium-tin-oxide) Schottky layers respectively. Along with 3-dB bandwidths of 50 and 60 GHz, these devices exhibit bandwidth-efficiency (BWE) products of 25 GHz and 45 GHz respectively. By using a postprocess recess etch, we tuned the resonance wavelength of an RCE InGaAs PD from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6 mW optical power, where we obtained 5 mA photocurrent at 3 V reverse bias. The photodetector had a temporal response of 16 psec at 7 V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.511202en_US
dc.subjectBandwidth-efficiency producten_US
dc.subjectHigh-speed photodetectorsen_US
dc.subjectp-i-n photodiodeen_US
dc.subjectQuantum efficiencyen_US
dc.subjectResonant cavity enhancementen_US
dc.subjectSchottky diodeen_US
dc.subjectBandwidthen_US
dc.subjectCavity resonatorsen_US
dc.subjectElectric fieldsen_US
dc.subjectFrequency responseen_US
dc.subjectLight absorptionen_US
dc.subjectLight transmissionen_US
dc.subjectMirrorsen_US
dc.subjectOptical communicationen_US
dc.subjectPhotocurrentsen_US
dc.subjectPhotodetectorsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectBandwidth-efficiency producten_US
dc.subjectHigh-speed photodetectorsen_US
dc.subjectResonant cavity enhancementen_US
dc.subjectPhotodiodesen_US
dc.titleUltrafast and highly efficient resonant cavity enhanced photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage389en_US
dc.citation.epage399en_US
dc.citation.epage
dc.citation.volumeNumber5246en_US
dc.identifier.doi10.1117/12.511202en_US


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