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dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloğlu, Tolgaen_US
dc.contributor.authorAytür, Orhanen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialSan Francisco, Unied States
dc.date.accessioned2016-02-08T11:54:33Z
dc.date.available2016-02-08T11:54:33Z
dc.date.issued2003-04en_US
dc.identifier.issn0272-9172
dc.identifier.urihttp://hdl.handle.net/11693/27480
dc.descriptionDate of Conference: 22-24 April, 2003
dc.descriptionConference name: 2003 MRS Spring Meeting & Exhibit Symposium C—New Applications for Wide-Bandgap Semiconductors
dc.description.abstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.en_US
dc.language.isoEnglishen_US
dc.source.titleMaterials Research Society Symposium - Proceedingsen_US
dc.relation.isversionofhttps://doi.org/10.1557/PROC-764-C3.22
dc.subjectBandwidthen_US
dc.subjectCavity resonatorsen_US
dc.subjectEnergy gapen_US
dc.subjectGallium nitrideen_US
dc.subjectIndium compoundsen_US
dc.subjectMirrorsen_US
dc.subjectRefractive indexen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectThin filmsen_US
dc.subjectUltraviolet detectorsen_US
dc.subjectFast pulse responsesen_US
dc.subjectReflectivity measurementsen_US
dc.subjectResonant peaksen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.citation.spage159en_US
dc.citation.epage164en_US
dc.identifier.doi10.1557/PROC-764-C3.22
dc.publisherMaterials Research Society
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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