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dc.contributor.authorSevik, Cemen_US
dc.contributor.authorBulutay, Ceyhunen_US
dc.coverage.spatialModena, Italyen_US
dc.date.accessioned2016-02-08T11:54:07Zen_US
dc.date.available2016-02-08T11:54:07Zen_US
dc.date.issued2004en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/11693/27461en_US
dc.descriptionDate of Conference: 21 July-1 August 2003en_US
dc.descriptionConference Name: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductorsen_US
dc.description.abstractGallium nitride with its high negative differential mobility threshold is an appealing material for high power millimetre-wave oscillators as a Gunn diode. By means of extensive ensemble Monte Carlo simulations, the dynamics of large-amplitude Gunn domain oscillations from 120 GHz to 650 GHz is studied in detail. Their operations are checked under both impressed single-tone sinusoidal bias and external tank circuit conditions. The width of the doping notch is observed to enhance higher harmonic efficiency at the expense of the fundamental frequency up to a critical value, beyond which sustained Gunn oscillations cease. The degeneracy effects due to the Pauli exclusion principle are also considered, but their effects are seen to be negligible within the realistic bounds of the Gunn diode operation.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/19/4/065en_US
dc.subjectComputer simulationen_US
dc.subjectElectric potentialen_US
dc.subjectGunn diodesen_US
dc.subjectGunn oscillatorsen_US
dc.subjectImpact ionizationen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectNatural frequenciesen_US
dc.subjectSemiconductor dopingen_US
dc.subjectPauli exclusion principleen_US
dc.subjectGallium nitrideen_US
dc.titleGunn oscillations in GaN channelsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage188en_US
dc.citation.epage190en_US
dc.citation.volumeNumber19en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1088/0268-1242/19/4/065en_US
dc.publisherIOPen_US


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