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dc.contributor.authorOzbay, E.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2016-02-08T11:51:50Z
dc.date.available2016-02-08T11:51:50Z
dc.date.issued2005en_US
dc.identifier.issn16057422
dc.identifier.urihttp://hdl.handle.net/11693/27381
dc.description.abstractDesign, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA leakage currents at 6 V and 12 V reverse bias were measured on p-i-n and Schottky photodiode samples respectively. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W-1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.15 A/W and 0.11 A/W peak responsivity values at 267 nm and 261 nm respectively. All samples displayed true solar-blind response with cut-off wavelengths smaller than 280 nm. A visible rejection of 4×104 was achieved with Schottky detector samples. High speed measurements at 267 nm resulted in fast pulse responses with >GHz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleProgress in Biomedical Optics and Imaging - Proceedings of SPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.582491en_US
dc.subjectAlGaNen_US
dc.subjectDetectivityen_US
dc.subjectHeterostructureen_US
dc.subjectHigh-speeden_US
dc.subjectMSMen_US
dc.subjectp-i-nen_US
dc.subjectPhotodetectoren_US
dc.subjectSchottkyen_US
dc.subjectSolar-blinden_US
dc.subjectUVen_US
dc.subjectAluminum nitrideen_US
dc.subjectCharacterizationen_US
dc.subjectFabricationen_US
dc.subjectGallium nitrideen_US
dc.subjectHeterojunctionsen_US
dc.subjectLeakage currentsen_US
dc.subjectPhotoconducting materialsen_US
dc.subjectPhotodiodesen_US
dc.subjectPhotomultipliersen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectTernary systemsen_US
dc.subjectAlGaNen_US
dc.subjectDetectivityen_US
dc.subjectHigh-speeden_US
dc.subjectMetal-semiconductor-metal (MSM)en_US
dc.subjectP-i-nen_US
dc.subjectSolar-blinden_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-performance solar-blind AlGaN photodetectorsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.citation.spage375en_US
dc.citation.epage388en_US
dc.citation.volumeNumber5732en_US
dc.identifier.doi10.1117/12.582491en_US


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