Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/26934
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. ©2003 Optical Society of America.
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