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dc.contributor.authorBulutay, Ceyhunen_US
dc.contributor.authorZakhleniuk, N. A.en_US
dc.coverage.spatialStrasbourg, Franceen_US
dc.date.accessioned2016-02-08T11:35:36Zen_US
dc.date.available2016-02-08T11:35:36Zen_US
dc.date.issued2008en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/11693/26779en_US
dc.descriptionDate of Conference: 28 May–1 June 2007en_US
dc.descriptionConference Name: E-MRS 2007 Spring Meeting Symposium F Novel Gain Materials and Devices Based on III-N-V Compoundsen_US
dc.description.abstractRapid development of InN technology demands comprehensive assessment of the electronic and optoelectronic potential of this material. In this theoretical work the effect of free electrons on the optical properties of the wurtzite phase of InN is investigated. The blue shift of the optical absorption edge by the free-carrier band filling is known as the Burstein-Moss effect for which InN offers to be a very suitable candidate as has been recently demonstrated experimentally. Due to well known Kramers-Kronig relations, a change in absorption is accompanied by a change in the index of refraction. Considering n-type InN samples with free electron concentrations ranging from 5x10 17 to 5x1020 cm-3, and employing a nonlocal empirical pseudopotential band structure, it is shown that this leads to a few percent change of the index of refraction. These carrier-induced refractive index changes can be utilized in optical switches, futhermore it needs to be taken into account in the design of InN-based optical devices such as lasers and optical modulators.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi (C) Current Topics in Solid State Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.200777471en_US
dc.subjectBand fillingsen_US
dc.subjectBlue shiften_US
dc.subjectComprehensive assessmenten_US
dc.subjectEmpirical pseudo-potentialen_US
dc.subjectFree electronen_US
dc.subjectFree electron concentrationen_US
dc.subjectIndex of refractionen_US
dc.subjectInduced refractive indexen_US
dc.subjectOptical absorption edgeen_US
dc.subjectOptical modulatorsen_US
dc.subjectRapid developmenten_US
dc.subjectWurtzite phaseen_US
dc.subjectLight modulatorsen_US
dc.subjectLight refractionen_US
dc.subjectOptical instrumentsen_US
dc.subjectRefractive indexen_US
dc.subjectRefractometersen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectZinc sulfideen_US
dc.subjectOptical switchesen_US
dc.subjectBurstein-Moss effecten_US
dc.subjectKramers-Kronig relationsen_US
dc.titleCarrier-induced refractive index change in InNen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage511en_US
dc.citation.epage513en_US
dc.citation.volumeNumber5en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1002/pssc.200777471en_US
dc.publisherWileyen_US


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