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dc.contributor.authorArslan, E.en_US
dc.contributor.authorDemirel P.en_US
dc.contributor.authorÇakmak H.en_US
dc.contributor.authorÖztürk, M.K.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:02:35Z
dc.date.available2016-02-08T11:02:35Z
dc.date.issued2014en_US
dc.identifier.issn16878434
dc.identifier.urihttp://hdl.handle.net/11693/26629
dc.description.abstractThe 150 nm thick, (0001) orientated wurtzite-phase Al1-x InxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 μm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1-x InxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x), lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations) of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles. Copyright © 2014 Engin Arslan et al.en_US
dc.language.isoEnglishen_US
dc.source.titleAdvances in Materials Science and Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1155/2014/980639en_US
dc.subjectMosaic structureen_US
dc.subjectSapphire substratesen_US
dc.titleMosaic structure characterization of the AlInN layer grown on sapphire substrateen_US
dc.typeArticleen_US
dc.departmentNANOTAM - Nanotechnology Research Center
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.volumeNumber2014en_US
dc.identifier.doi10.1155/2014/980639en_US
dc.publisherHindawi Publishing Corporationen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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