On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Demir, H. V.
Optical Society of America
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/26497
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron meanfree- path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. © 2014 Optical Society of America.
- Research Paper 
Showing items related by title, author, creator and subject.
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures Tülek, R.; Ilgaz, A.; Gökden, S.; Teke, A.; Öztürk, M.K.; Kasap, M.; Öz̧elik, S.; Arslan, E.; Özbay, E. (2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ...
Photogeneration of hot plasmonic electrons with metal nanocrystals: Quantum description and potential applications Govorov A.O.; Zhang H.; Demir H.V.; Gun'Ko Y.K. (Elsevier B.V., 2014)The paper reviews physical concepts related to the collective dynamics of plasmon excitations in metal nanocrystals with a focus on the photogeneration of energetic carriers. Using quantum linear response theory, we analyze ...
The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllnN/GaN two-dimensional electron gas heterostructures Teke, A.; Gökden, S.; Tülek, R.; Leach J.H.; Fan Q.; Xie J.; Özgür Ü.; Morkoç H.; Lisesivdin, S.B.; Özbay, E. (2009)The scattering mechanisms governing the transport properties of high mobility AllnN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. ...