Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface
Okyay, Ali Kemal
Solid State Communications
37 - 40
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Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.
KeywordsA. Ga doped ZnO
D. Surface plasmon
Fabrication and characterizations
Metal-semiconductor-metal uv photodetectors
Surface plasmon effects
Three orders of magnitude
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.ssc.2015.10.007
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