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      Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

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      Author
      Kumar, M.
      Noh, Y.
      Polat, K.
      Okyay, Ali Kemal
      Lee, D.
      Date
      2015
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Pergamon Press
      Volume
      224
      Pages
      37 - 40
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.
      Keywords
      A. Ga doped ZnO
      A. Graphene
      C. Metal-semiconductor-metal
      D. Surface plasmon
      Photodetectors
      Photons
      Plasmons
      Zinc oxide
      Fabrication and characterizations
      Metal-semiconductor-metal uv photodetectors
      Surface plasmon effects
      Surface plasmons
      Temperature responsivity
      Three orders of magnitude
      Metals
      Permalink
      http://hdl.handle.net/11693/26308
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.ssc.2015.10.007
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      • Department of Electrical and Electronics Engineering 3524
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