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dc.contributor.authorAllakhverdiev, K. R.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T10:51:52Z
dc.date.available2016-02-08T10:51:52Z
dc.date.issued1995en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25892
dc.description.abstractLow-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.en_US
dc.language.isoEnglishen_US
dc.source.titleSolid State Communicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(95)00037-2en_US
dc.subjectA. ferroelectricsen_US
dc.subjectA. semiconductorsen_US
dc.subjectD. optical propertiesen_US
dc.subjectD. phase transitionsen_US
dc.subjectE. luminescenceen_US
dc.subjectBand structureen_US
dc.subjectCrystal symmetryen_US
dc.subjectCrystalsen_US
dc.subjectFerroelectric materialsen_US
dc.subjectLow temperature effectsen_US
dc.subjectOptical propertiesen_US
dc.subjectPhase transitionsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectThallium compoundsen_US
dc.subjectLow temperature photoluminescence spectraen_US
dc.subjectMixed crystalsen_US
dc.subjectThallium indium gallium sulfideen_US
dc.subjectSemiconducting indium compoundsen_US
dc.titleLow-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage777en_US
dc.citation.epage782en_US
dc.citation.volumeNumber94en_US
dc.citation.issueNumber9en_US
dc.identifier.doi10.1016/0038-1098(95)00037-2en_US
dc.publisherPergamon Pressen_US


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