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dc.contributor.authorAytür, O.en_US
dc.contributor.authorDikmelik, Y.en_US
dc.date.accessioned2016-02-08T10:45:37Z
dc.date.available2016-02-08T10:45:37Z
dc.date.issued1998-03en_US
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/11693/25487
dc.description.abstractThis paper presents a theoretical analysis of self-doubling optical parametric oscillators (OPO's) where a single nonlinear crystal is used for both parametric generation and frequency doubling. In these devices, the parametric generation and frequency-doubling processes are both phase matched for the same direction of propagation inside the crystal. Different polarization geometries for which this simultaneous phase-matching condition can potentially be satisfied are identified and categorized. Plane-wave coupled-mode equations are presented for each of these categories. Numerical solutions of these coupled-mode equations and calculation of the single-pass saturated signal gain are outlined. Intracavity signal photon flux calculations iased on these numerical solutions are presented. The dependence of performance measures such as the photon conversion efficiency on various design parameters are investigated.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Journal of Quantum Electronicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/3.661452en_US
dc.subjectNonlinear frequency conversionen_US
dc.subjectOptical parametric oscillatorsen_US
dc.subjectParametric devicesen_US
dc.subjectSecond-harmonic generationen_US
dc.subjectCalculationsen_US
dc.subjectLight polarizationen_US
dc.subjectNumerical methodsen_US
dc.subjectOptical frequency conversionen_US
dc.subjectPhotonsen_US
dc.subjectSecond harmonic generationen_US
dc.subjectSingle crystalsen_US
dc.subjectFrequency doublingen_US
dc.subjectOptical parametric oscillatorsen_US
dc.subjectPhase matchingen_US
dc.subjectPlane wave theoryen_US
dc.subjectParametric oscillatorsen_US
dc.titlePlane-wave theory of self-doubling optical parametric oscillatorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage447en_US
dc.citation.epage458en_US
dc.citation.volumeNumber34en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1109/3.661452en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US


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