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      Hydrodynamic approach for modelling transport in quantum well device structures

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      Author
      Besikci, C.
      Tanatar, Bilal
      Sen, O.
      Date
      1998
      Source Title
      Journal of Physics D: Applied Physics
      Print ISSN
      0022-3727
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      31
      Issue
      17
      Pages
      2211 - 2219
      Language
      English
      Type
      Article
      Item Usage Stats
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      105
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      Abstract
      A semiclassical approach for modelling electron transport in quantum well structures is presented. The model is based on the balance equations governing the conservation of particle density, momentum and energy with Monte Carlo (MC) generated transport parameters. Three valleys of the conduction band, size quantization in the Γ valley, and the lowest two subbands in the quantum well are considered by taking the detailed intersubband dynamics into account. The transport parameters of the model are extracted from steady-state MC simulations based on an improved formulation of two-dimensional polar optical phonon scattering including screening effects. The predictions of the proposed model have been found to be in excellent agreement with those of the ensemble MC simulations under both time varying and spatially nonuniform fields. The calculated transport parameters which are of interest for device modelling are presented as a function of the electron energy for the AIGaAs/GaAs quantum well. The model serves as an accurate semiclassical alternative to costly ensemble MC simulations for studying the transport in quantum well structures and for the modelling and optimization of submicron devices based on these structures, such as modulation doped field-effect transistors (MODFETs).
      Keywords
      Computer simulation
      Electron transport properties
      Hydrodynamics
      Monte Carlo methods
      Phonons
      Semiconducting aluminum compounds
      Semiconducting gallium arsenide
      Semiconductor device models
      Semiconductor device structures
      Energy conservation equation
      Momentum conservation equation
      Particle density conservation equation
      Semiconductor quantum wells
      Permalink
      http://hdl.handle.net/11693/25410
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0022-3727/31/17/021
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