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dc.contributor.authorBattal, E.en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorTanrikulu, M. Y.en_US
dc.contributor.authorOkyay, A., K.en_US
dc.contributor.authorAkin, T.en_US
dc.date.accessioned2016-02-08T10:38:41Z
dc.date.available2016-02-08T10:38:41Z
dc.date.issued2014en_US
dc.identifier.issn1862-6300
dc.identifier.urihttp://hdl.handle.net/11693/25069
dc.description.abstractZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssa.201431195en_US
dc.subjectZnOen_US
dc.subjectAtomsen_US
dc.subjectBolometersen_US
dc.subjectDepositionen_US
dc.subjectMetallic filmsen_US
dc.subjectOptical propertiesen_US
dc.subjectSemiconductor materialsen_US
dc.subjectTemperatureen_US
dc.subjectTemperature sensorsen_US
dc.subjectThin filmsen_US
dc.subjectZinc oxideen_US
dc.subjectAbsorber materialen_US
dc.subjectAtomic layer depositeden_US
dc.subjectElectrical conductionen_US
dc.subjectNear room temperatureen_US
dc.subjectOptical applicationsen_US
dc.subjectTemperature coefficient of resistanceen_US
dc.subjectUncooled microbolometersen_US
dc.subjectZnOen_US
dc.subjectAtomic layer depositionen_US
dc.titleAtomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer materialen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Centeren_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage2475en_US
dc.citation.epage2482en_US
dc.citation.volumeNumber211en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1002/pssa.201431195en_US
dc.publisherWiley-VCH Verlagen_US


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