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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorYuksek, N. S.en_US
dc.date.accessioned2016-02-08T10:31:12Z
dc.date.available2016-02-08T10:31:12Z
dc.date.issued2002en_US
dc.identifier.issn0953-8984
dc.identifier.urihttp://hdl.handle.net/11693/24565
dc.description.abstractPhotoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T = 10 K and an excitation intensity of 7.5 W cm-2. We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm-2. The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Physics Condensed Matteren_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-8984/14/49/323en_US
dc.subjectElectric propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSpectroscopyen_US
dc.subjectTemperatureen_US
dc.subjectThallium compoundsen_US
dc.subjectConduction banden_US
dc.subjectLaser excitation intensityen_US
dc.subjectPhotoluminescence spectraen_US
dc.subjectValence banden_US
dc.subjectSingle crystalsen_US
dc.titleTemperature-and excitation intensity-dependent photoluminescence in TlInSeS single crystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage13685en_US
dc.citation.epage13692en_US
dc.citation.volumeNumber14en_US
dc.citation.issueNumber49en_US
dc.identifier.doi10.1088/0953-8984/14/49/323en_US
dc.publisherAmerican Institute of Physicsen_US


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