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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorYuksek, N. S.en_US
dc.date.accessioned2016-02-08T10:30:29Z
dc.date.available2016-02-08T10:30:29Z
dc.date.issued2003en_US
dc.identifier.issn0025-5408
dc.identifier.urihttp://hdl.handle.net/11693/24513
dc.description.abstractThermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.en_US
dc.language.isoEnglishen_US
dc.source.titleMaterials Research Bulletinen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0025-5408(02)01051-6en_US
dc.subjectChalcogenidesen_US
dc.subjectDefectsen_US
dc.subjectElectrical propertiesen_US
dc.subjectSemiconductorsen_US
dc.subjectCrystal structureen_US
dc.subjectDefectsen_US
dc.subjectElectric conductivityen_US
dc.subjectElectric currentsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectThermal effectsen_US
dc.subjectTrapping centersen_US
dc.subjectSingle crystalsen_US
dc.titleThermally stimulated currents in n-InS single crystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage699en_US
dc.citation.epage704en_US
dc.citation.volumeNumber38en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1016/S0025-5408(02)01051-6en_US
dc.publisherElsevier Scienceen_US
dc.identifier.eissn1873-4227


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