ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum
Date
2004
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Source Title
IEEE Journal on Selected Topics in Quantum Electronics
Print ISSN
1077-260X
Electronic ISSN
Publisher
IEEE
Volume
10
Issue
4
Pages
759 - 765
Language
English
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Abstract
High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.
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Keywords
Heterostructure , High performance , III-V alloys , Indium-tin-oxide (ITO) , Photodiode , Resonant cavity , Schottky , Bandwidth , Carrier communication , Electric conductivity , Electric currents , Fabrication , Heterojunctions , Indium compounds , Infrared spectrographs , Photodetectors , Schottky barrier diodes , Semiconductor materials , Spectrum analysis , Ultraviolet detectors , High performance , III-V alloys , Indium-tin-oxide (ITO) , Resonant cavity , Photodiodes