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      High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures

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      Author(s)
      Özbay, Ekmel
      Bıyıklı, Necmi
      Kimukin, I.
      Kartaloglu, T.
      Tut, T.
      Aytür, O.
      Date
      2004
      Source Title
      IEEE Journal on Selected Topics in Quantum Electronics
      Print ISSN
      1077-260X
      Publisher
      IEEE
      Volume
      10
      Issue
      4
      Pages
      742 - 751
      Language
      English
      Type
      Article
      Item Usage Stats
      272
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      330
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      Abstract
      Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.
      Keywords
      Algan
      Detectivity
      Heterustructure
      High speed
      Metal-semiconductor-metal (MSM)
      P-i-n
      Photodetector
      Schottky
      Solar blind
      Ultraviolet
      Bandwidth
      Electric currents
      Fabrication
      Photoconductivity
      Photodetectors
      Photodiodes
      Semiconducting aluminum compounds
      Semiconducting gallium compounds
      Solar energy
      Voltage measurement
      AlGaN
      Detectivity
      High speed
      Metal-semiconductor-metal (MSM)
      Solar blind
      Heterojunctions
      Permalink
      http://hdl.handle.net/11693/24262
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/JSTQE.2004.831681
      Collections
      • Department of Electrical and Electronics Engineering 4012
      • Department of Physics 2551
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