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dc.contributor.authorBiyikli, N.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T10:25:38Z
dc.date.available2016-02-08T10:25:38Z
dc.date.issued2004en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/24204
dc.description.abstractWe report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 μm diameter devices exhibited pulse responses with ∼70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/19/11/008en_US
dc.subjectAluminum compoundsen_US
dc.subjectCrystal structureen_US
dc.subjectDoping (additives)en_US
dc.subjectEtchingen_US
dc.subjectFast Fourier transformsen_US
dc.subjectHeterojunctionsen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSapphireen_US
dc.subjectScanning electron microscopyen_US
dc.subjectCarrier diffusionen_US
dc.subjectHarmonic beamsen_US
dc.subjectReactive ion etching (RIE)en_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.citation.spage1259en_US
dc.citation.epage1262en_US
dc.citation.volumeNumber19en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1088/0268-1242/19/11/008en_US
dc.publisherInstitute of Physicsen_US


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